The SCEAS System
Navigation Menu

Journals in DBLP

Microelectronics Reliability
2001, volume: 41, number: 2

  1. F. Schwierz, Juin J. Liou
    Semiconductor devices for RF applications: evolution and current status. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:145-168 [Journal]
  2. M. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates
    A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:169-177 [Journal]
  3. Hei Wong, P. G. Han, M. C. Poon, Y. Gao
    Investigation of the surface silica layer on porous poly-Si thin films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:179-184 [Journal]
  4. M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov
    X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:185-191 [Journal]
  5. Kin P. Cheung
    Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:193-199 [Journal]
  6. C. T. Hsu, M. M. Lau, Y. T. Yeow
    Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:201-209 [Journal]
  7. Robert C. Baumann, Eric B. Smith
    Neutron-induced 10B fission as a major source of soft errors in high density SRAMs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:211-218 [Journal]
  8. Alexander N. Bubennikov, Andrey V. Zykov
    Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:219-228 [Journal]
  9. Gábor Harsányi, George Inzelt
    Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:229-237 [Journal]
  10. Constance E. Schuster, Mark G. Vangel, Harry A. Schafft
    Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:239-252 [Journal]
  11. L. Militaru, A. Souifi, M. Mouis, A. Chantre, G. Brémond
    Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:253-263 [Journal]
  12. Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy, Jacques Lebailly
    Low-frequency noise in single-poly bipolar transistors at low base current density. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:265-271 [Journal]
  13. A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall, P. L. F. Hemment
    Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:273-279 [Journal]
  14. Jingsong Xie, Michael G. Pecht, David DeDonato, Ali Hassanzadeh
    An investigation of the mechanical behavior of conductive elastomer interconnects. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:281-286 [Journal]
  15. P. L. Tu, Y. C. Chan, K. C. Hung, J. K. L. Lai
    Study of micro-BGA solder joint reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:287-293 [Journal]
  16. Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu, Dusan Boroyevich, Guo-Quan Lu
    Design issues of a three-dimensional packaging scheme for power modules. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:295-305 [Journal]
  17. L. Y. Sheng, C. De Tandt, W. Ranson, R. Vounckx
    Reliability aspects of thermal micro-structures implemented on industrial 0.8 mum CMOS chips. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:307-315 [Journal]
  18. Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway
    A generalized model for the lifetime of microelectronic components, applied to storage conditions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:317-322 [Journal]
  19. Asad A. Ismaeel, Rajan Mathew, R. Bhatnagar
    Module allocation with idle-time utilization for on-line testability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:2, pp:323-332 [Journal]
NOTICE1
System may not be available sometimes or not working properly, since it is still in development with continuous upgrades
NOTICE2
The rankings that are presented on this page should NOT be considered as formal since the citation info is incomplete in DBLP
 
System created by asidirop@csd.auth.gr [http://users.auth.gr/~asidirop/] © 2002
for Data Engineering Laboratory, Department of Informatics, Aristotle University © 2002