F. Schwierz, Juin J. Liou Semiconductor devices for RF applications: evolution and current status. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:145-168 [Journal]
Kin P. Cheung Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:193-199 [Journal]
C. T. Hsu, M. M. Lau, Y. T. Yeow Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:201-209 [Journal]
Alexander N. Bubennikov, Andrey V. Zykov Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:219-228 [Journal]
Gábor Harsányi, George Inzelt Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:229-237 [Journal]
L. Militaru, A. Souifi, M. Mouis, A. Chantre, G. Brémond Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2001, v:41, n:2, pp:253-263 [Journal]