The SCEAS System
Navigation Menu
Introduction
Collection Based
Clustering
Ranking
Paper Based
Journals
Conferences
DB Status
Statistics
Search

Journals in DBLP

Microelectronics Reliability
2001, volume: 41, number: 7

  1. Georges Charitat
    In memory of Pierre Rossel. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:933-934 [Journal]
  2. Andreas Martin
    Editorial. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:935- [Journal]
  3. Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson
    Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:937-945 [Journal]
  4. T. Mikolajick, C. Dehm, W. Hartner, I. Kasko, M. J. Kastner, N. Nagel, M. Moert, C. Mazure
    FeRAM technology for high density applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:947-950 [Journal]
  5. P. O'Sullivan, R. Clerc, Kevin G. McCarthy, Alan Mathewson, G. Ghibaudo
    Direct tunnelling models for circuit simulation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:951-957 [Journal]
  6. G. Reimbold, T. Poiroux
    Plasma charging damage mechanisms and impact on new technologies. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:959-965 [Journal]
  7. R. Falster, F. Bonoli, V. V. Voronkov
    Dielectric breakdown distributions for void containing silicon substrates. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:967-971 [Journal]
  8. G. Innertsberger, T. Pompl, M. Kerber
    The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:973-975 [Journal]
  9. A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, Walter Hansch, H. Baumgärtner, I. Eisele
    Nitrogen implantations for rapid thermal oxinitride layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:977-980 [Journal]
  10. L. Jalabert, Pierre Temple-Boyer, G. Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand
    Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:981-985 [Journal]
  11. M. P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel
    Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:987-990 [Journal]
  12. H. J. Osten, J. P. Liu, H.-J. Müssig, P. Zaumseil
    Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:991-994 [Journal]
  13. C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, Stefan De Gendt, M. Heyns, O. Van Der Biest
    In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:995-998 [Journal]
  14. N. Galbiati, G. Ghidini, C. Cremonesi, L. Larcher
    Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:999-1002 [Journal]
  15. D. Brazzelli, G. Ghidini, C. Riva
    Optimization of WSi2 by SiH4 CVD: impact on oxide quality. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1003-1006 [Journal]
  16. Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber
    Ultra-thick gate oxides: charge generation and its impact on reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1007-1010 [Journal]
  17. R. Rodríguez, M. Porti, M. Nafría, X. Aymerich
    Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1011-1013 [Journal]
  18. M. Badila, Ph. Godignon, J. Millán, S. Berberich, G. Brezeanu
    The electron irradiation effects on silicon gate dioxide used for power MOS devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1015-1018 [Journal]
  19. Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger
    Quality assessment of thin oxides using constant and ramped stress measurements. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1019-1022 [Journal]
  20. D. Zander, C. Petit, F. Saigné, A. Meinertzhagen
    High field stress at and above room temperature in 2.3 nm thick oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1023-1026 [Journal]
  21. R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis
    Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1027-1030 [Journal]
  22. S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo
    Body effect induced wear-out acceleration in ultra-thin oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1031-1034 [Journal]
  23. F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo
    Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1035-1039 [Journal]
  24. M. Porti, X. Blasco, M. Nafría, X. Aymerich, Alexander Olbrich, Bernd Ebersberger
    Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1041-1044 [Journal]
  25. Nihar R. Mohapatra, A. Dutta, G. Sridhar, Madhav P. Desai, V. Ramgopal Rao
    Sub-100 nm CMOS circuit performance with high-K gate dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1045-1048 [Journal]
  26. A. Kumar, S. Mahapatra, R. Lal, V. R. Rao
    Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1049-1051 [Journal]
  27. B. J. O'Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven
    Flat band voltage shift and oxide properties after rapid thermal annealing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1053-1056 [Journal]
  28. V. Mikhelashvili, G. Eisenstein
    Optical and electrical characterization of the electron beam gun evaporated TiO2 film. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1057-1061 [Journal]
  29. G. Borsoni, N. Béchu, M. Gros-Jean, M. L. Korwin-Pawlowski, R. Laffitte, V. Le Roux, L. Vallier, N. Rochat, C. Wyon
    Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1063-1066 [Journal]
  30. J.-W. Zahlmann-Nowitzki, L. Nebrich, P. Seegebrecht
    On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1067-1069 [Journal]
  31. N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhov, P. Seegebrecht
    Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1071-1076 [Journal]
  32. D. Hill, X. Blasco, M. Porti, M. Nafría, X. Aymerich
    Characterising the surface roughness of AFM grown SiO2 on Si. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1077-1079 [Journal]
  33. D. Weber, F. Höhnsdorf, A. Hausmann, A. Klipp, Z. Stavreva, J. Herrmann, L. Bauch, M. Junack, H. Neef, M. Nichterwitz, S. Finsterbusch
    Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1081-1083 [Journal]
  34. S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel
    Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1085-1088 [Journal]
  35. Matthias Beichele, Anton J. Bauer, Heiner Ryssel
    Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1089-1092 [Journal]
  36. J. Dabrowski, V. Zavodinsky, A. Fleszar
    Pseudopotential study of PrO2 and HfO2 in fluorite phase. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1093-1096 [Journal]
  37. B. Lanchava, P. Baumgartner, A. Martin, A. Beyer, E. Mueller
    Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1097-1100 [Journal]
NOTICE1
System may not be available sometimes or not working properly, since it is still in development with continuous upgrades
NOTICE2
The rankings that are presented on this page should NOT be considered as formal since the citation info is incomplete in DBLP
 
Introduction Collection Based Clustering Ranking Paper Based Journals Conferences DB Status Statistics Search
System created by asidirop@csd.auth.gr [http://users.auth.gr/~asidirop/] © 2002
for Data Engineering Laboratory, Department of Informatics, Aristotle University © 2002