Journals in DBLP

Microelectronics Reliability
2001, volume: 41, number: 8

1. Wallace T. Anderson, Roberto Menozzi
   Editorial. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1101- [Journal]
   
2. Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers
   Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1103-1108 [Journal]
   
3. W. T. Anderson, J. A. Roussos, J. A. Mittereder, D. E. Ioannou, C. Moglestue
   Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1109-1113 [Journal]
   
4. B. M. Paine, R. C. Wong, A. E. Schmitz, R. H. Walden, L. D. Nguyen, M. J. Delaney, K. C. Hum
   Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1115-1122 [Journal]
   
5. William J. Roesch
   Volume impacts on GaAs reliability improvement. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1123-1127 [Journal]
   
6. S. Thomas III, C. H. Fields, M. Madhav
   RF modeling approach to determining end-of-life reliability for InP-based HBTs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1129-1135 [Journal]
   
7. Peter Dai, Philip Canfield
   Location of defective cells in HBT power amplifier arrays using IR emission microscopy. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1137-1141 [Journal]
   
8. Daniel L. Barton, Shigeru Nakajima, Massimo Vanzi
   Editorial. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1143-1144 [Journal]
   
9. Edward I. Cole Jr.
   Global fault localization using induced voltage alteration. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:8, pp:1145-1159 [Journal]
   
10. Ingrid De Wolf, Mahmoud Rasras
    Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1161-1169 [Journal]
    
11. Yasuhiro Mitsui, Fumiko Yano, Hiroshi Kakibayashi, Hiroyasu Shichi, Takashi Aoyama
    Developments of new concept analytical instruments for failure analyses of sub-100 nm devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1171-1183 [Journal]
    
12. K. Krieg, D. J. Thomson, G. E. Bridges
    Electrical probing of deep sub-micron integrated circuits using scanning probes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1185-1191 [Journal]
    
13. Silke Liebert
    Failure analysis from the back side of a die. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1193-1201 [Journal]
    
14. Chisato Hashimoto, Takamitsu Takizawa, Sigeru Nakajima, Mitsuru Shinagawa, Tadao Nagatsuma
    Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1203-1209 [Journal]
    
15. L. A. Knauss, A. B. Cawthorne, N. Lettsome, S. Kelly, S. Chatraphorn, E. F. Fleet, F. C. Wellstood, W. E. Vanderlinde
    Scanning SQUID microscopy for current imaging. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1211-1229 [Journal]
    
16. Bernd Ebersberger, Alexander Olbrich, Christian Boit
    Scanning probe microscopy in semiconductor failure analysis. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1231-1236 [Journal]
    
17. J. M. Chin, J. C. H. Phang, D. S. H. Chan, M. Palaniappan, G. Gilfeather, C. E. Soh
    Single contact optical beam induced currents. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1237-1242 [Journal]
    
18. T. Koyama, M. Umeno, K. Sonoda, J. Komori, Y. Mashiko
    Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1243-1253 [Journal]
    
19. Yuan Ji, Ziguo Li, Dong Wang, Yaohai Cheng, Dong Luo, Bin Zong
    Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1255-1258 [Journal]
    
20. M. K. Mazumder, S. Yamamoto, H. Maeda, J. Komori, Y. Mashiko
    Mechanism of pre-annealing effect on electromigration immunity of Al-Cu line. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1259-1264 [Journal]
    
21. Hide Murayama, Makoto Yamazaki, Shigeru Nakajima
    Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:8, pp:1265-1272 [Journal]