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Journals in DBLP

Microelectronics Reliability
2002, volume: 42, number: 2

  1. E. Atanassova, A. Paskaleva
    Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:157-173 [Journal]
  2. Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu
    The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:175-181 [Journal]
  3. Lei Du, Yiqi Zhuang, Yong Wu
    1/fgamma Noise separated from white noise with wavelet denoising. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:183-188 [Journal]
  4. Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, Noriaki Nakayama
    On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:189-199 [Journal]
  5. Shinya Ito, Hiroaki Namba, Tsuyoshi Hirata, Koichi Ando, Shin Koyama, Nobuyuki Ikezawa, Tatsuya Suzuki, Takehiro Saitoh, Tadahiko Horiuchi
    Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:201-209 [Journal]
  6. Young S. Chung, Bob Baird
    Power capability limits of power MOSFET devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:211-218 [Journal]
  7. Takeshi Yanagisawa, Takeshi Kojima, Tadamasa Koyanagi, Kiyoshi Takahisa, Kuniomi Nakamura
    Changes in the characteristics of CuInGaSe2 solar cells under light irradiation and during recovery: degradation analysis by the feeble light measuring method. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:219-223 [Journal]
  8. O. Jeandupeux, V. Marsico, A. Acovic, P. Fazan, H. Brune, K. Kern
    Use of scanning capacitance microscopy for controlling wafer processing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:225-231 [Journal]
  9. Philip M. Fabis
    The processing technology and electronic packaging of CVD diamond: a case study for GaAs/CVD diamond plastic packages. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:233-252 [Journal]
  10. K. Jonnalagadda
    Reliability of via-in-pad structures in mechanical cycling fatigue. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:253-258 [Journal]
  11. M. S. Kilijanski, Y.-L. Shen
    Analysis of thermal stresses in metal interconnects with multilevel structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:259-264 [Journal]
  12. Andrew J. G. Strandjord, Scott Popelar, Christine Jauernig
    Interconnecting to aluminum- and copper-based semiconductors (electroless-nickel/gold for solder bumping and wire bonding). [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:265-283 [Journal]
  13. Yu-lung Lo, Chih-Chiang Tsao
    Wirebond profiles characterized by a modified linkage-spring model which includes a looping speed factor. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:285-291 [Journal]
  14. Jinlin Wang
    Underfill of flip chip on organic substrate: viscosity, surface tension, and contact angle. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:293-299 [Journal]
  15. Rajendra D. Pendse, Peng Zhou
    Methodology for predicting solder joint reliability in semiconductor packages. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:2, pp:301-305 [Journal]
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