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Journals in DBLP

Microelectronics Reliability
2005, volume: 45, number: 5-6

  1. Paul Hurley
    Editorial. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:767-769 [Journal]
  2. Gerald Lucovsky, J. C. Phillips
    Bond strain and defects at interfaces in high-k gate stacks. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:770-778 [Journal]
  3. T. Schram, L.-Å. Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen
    Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:779-782 [Journal]
  4. J.-P. Han, S. M. Koo, E. M. Vogel, E. P. Gusev, C. D'Emic, C. A. Richter, J. S. Suehle
    Reverse short channel effects in high-k gated nMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:783-785 [Journal]
  5. W. Deweerd, V. Kaushik, J. Chen, Y. Shimamoto, T. Schram, L.-Å. Ragnarsson, A. Delabie, L. Pantisano, B. Eyckens, J. W. Maes
    Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:786-789 [Journal]
  6. Udo Schwalke, Yordan Stefanov
    Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:790-793 [Journal]
  7. G. S. Lujan, W. Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, M. Heyns, K. De Meyer
    Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:794-797 [Journal]
  8. Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt
    Observation and characterization of defects in HfO2 high-K gate dielectric layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:798-801 [Journal]
  9. Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, S. A. Campbell
    Impact of nitrogen incorporation on interface states in (100)Si/HfO2. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:802-805 [Journal]
  10. Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff
    Probing stress effects in HfO2 gate stacks with time dependent measurements. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:806-810 [Journal]
  11. X. Blasco, M. Nafría, X. Aymerich, J. Pétry, W. Vandervorst
    Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:811-814 [Journal]
  12. J. Pétry, W. Vandervorst, L. Pantisano, Robin Degraeve
    On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:815-818 [Journal]
  13. Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel
    Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:819-822 [Journal]
  14. L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans
    Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:823-826 [Journal]
  15. G. Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom
    Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:827-830 [Journal]
  16. Pietro Delugas, Vincenzo Fiorentini
    Dielectric properties of two phases of crystalline lutetium oxide. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:831-833 [Journal]
  17. Andreas Martin
    Reliability of gate dielectrics and metal-insulator-metal capacitors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:834-840 [Journal]
  18. G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo
    Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal]
  19. F. Palumbo, G. Condorelli, S. Lombardo, K. L. Pey, C. H. Tung, L. J. Tang
    Structure of the oxide damage under progressive breakdown. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:845-848 [Journal]
  20. D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo
    On the SILC mechanism in MOSFET's with ultrathin oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:849-852 [Journal]
  21. Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo
    A comprehensive model for oxide degradation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:853-856 [Journal]
  22. G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia
    Impact of interface and bulk trapped charges on transistor reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:857-860 [Journal]
  23. R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich
    Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:861-864 [Journal]
  24. E. Sleeckx, M. Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, M. de Potter de ten Broeck, E. Augendre
    Optimization of low temperature silicon nitride processes for improvement of device performance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:865-868 [Journal]
  25. Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer
    Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:869-874 [Journal]
  26. M. Langenbuch, R. Bottini, M. E. Vitali, G. Ghidini
    In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:875-878 [Journal]
  27. A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato, N. D. Young
    Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:879-882 [Journal]
  28. C. Trapes, D. Goguenheim, A. Bravaix
    Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:883-886 [Journal]
  29. J. Yang, J. J. Kopanski, A. Postula, M. Bialkowski
    Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:887-890 [Journal]
  30. D. Zander
    Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:891-894 [Journal]
  31. E. Spitale, D. Corso, I. Crupi, S. Lombardo, C. Gerardi
    Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:895-898 [Journal]
  32. Josep Carreras, B. Garrido, J. R. Morante
    Improved charge injection in Si nanocrystal non-volatile memories. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:899-902 [Journal]
  33. V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido
    Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:903-906 [Journal]
  34. Fernanda Irrera, Giuseppina Puzzilli
    Crested barrier in the tunnel stack of non-volatile memories. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:907-910 [Journal]
  35. N. Baboux, C. Plossu, P. Boivin
    Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:911-914 [Journal]
  36. R. Rölver, O. Winkler, M. Först, B. Spangenberg, H. Kurz
    Light emission from Si/SiO2 superlattices fabricated by RPECVD. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:915-918 [Journal]
  37. C. M. Garner, G. Kloster, G. Atwood, L. Mosley, A. C. Palanduz
    Challenges for dielectric materials in future integrated circuit technologies. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:919-924 [Journal]
  38. E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer
    Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:925-928 [Journal]
  39. J. M. Decams, H. Guillon, C. Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, B. J. O'Sullivan, M. Modreanu, P. K. Hurley
    Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:929-932 [Journal]
  40. V. Mikhelashvili, B. Meyler, J. Shneider, O. Kreinin, G. Eisenstein
    Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:933-936 [Journal]
  41. V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele
    Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:937-940 [Journal]
  42. A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J. P. Sénateur, M. Audier, L. Hubert-Pfalzgraff
    Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100). [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:941-944 [Journal]
  43. U. Weber, M. Schumacher, J. Lindner, O. Boissière, P. Lehnen, S. Miedl, P. K. Baumann, G. Barbar, C. Lohe, T. McEntee
    AVD® technology for deposition of next generation devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:945-948 [Journal]
  44. S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä
    Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:949-952 [Journal]
  45. M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz
    Comparison of metal gate electrodes on MOCVD HfO2. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:953-956 [Journal]
  46. Q. Fang, I. Liaw, M. Modreanu, P. K. Hurley, I. W. Boyd
    Post deposition UV-induced O2 annealing of HfO2 thin films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:957-960 [Journal]
  47. Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee
    Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:961-964 [Journal]
  48. Y. Lu, O. Buiu, S. Hall, P. K. Hurley
    Optical and electrical characterization of hafnium oxide deposited by MOCVD. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:965-968 [Journal]
  49. Ming-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee
    Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:969-972 [Journal]
  50. James Prendergast, Eoin O'Driscoll, Ed Mullen
    Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:973-977 [Journal]
  51. S. Dueñas, H. Castán, H. García, J. Barbolla, E. San Andrés, I. Mártil, G. González-Díaz
    On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:978-981 [Journal]
  52. E. Halova, S. Alexandrova, A. Szekeres, M. Modreanu
    LPCVD-silicon oxynitride films: interface properties. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:982-985 [Journal]
  53. V. Em. Vamvakas, D. Davazoglou
    Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4+O2. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:986-989 [Journal]
  54. M. Vasilopoulou, A. M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou
    Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:990-993 [Journal]
  55. Giacomo Barletta, Giuseppe Currò
    Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:994-999 [Journal]
  56. S. A. Rushworth, L. M. Smith, A. J. Kingsley, R. Odedra, R. Nickson, P. Hughes
    Vapour pressure measurement of low volatility precursors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1000-1002 [Journal]
  57. P. C. Juan, H. C. Chou, J. Y. M. Lee
    The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1003-1006 [Journal]
  58. S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt
    Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1007-1011 [Journal]
  59. Mile K. Stojcev
    Testing Static Random Access Memories: Defects, Fault Models and Test Patterns, Said Hamdioui, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 221, plus XX, ISBN 1-4020-7752-1. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1012-1013 [Journal]
  60. Mile K. Stojcev
    Behrouz A. Forouzan, Data Communications and Networking Third edition, McGraw-Hill Higher Education, Boston (2003) ISBN 0-07-251584-8 Softcover, pp 973, plus XXXIV. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1014-1016 [Journal]
  61. Mile K. Stojcev
    Boris Murmann, Bernhard Boser, Digitally Assisted Pipeline ADCs: Theory and Implementation, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7839-0. Hardcover, pp 155, plus XX. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1017-1018 [Journal]
  62. Mile K. Stojcev
    Carl Hamacher, Zvonko Vranesic, Safwat Zaky, Computer Organization, Fifth edition, 2004, ISBN 0-07-112214-4. Hardcover, pp 805, plus XX. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:1019-1020 [Journal]
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