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Journals in DBLP

Microelectronics Reliability
2005, volume: 45, number: 1

  1. Tomasz Brozek
    Editorial. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:1-2 [Journal]
  2. M. Houssa
    Modelling negative bias temperature instabilities in advanced p-MOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:3-12 [Journal]
  3. Prasad Chaparala, Douglas Brisbin
    Impact of NBTI and HCI on PMOSFET threshold voltage drift. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:13-18 [Journal]
  4. Shyue Seng Tan, Tu Pei Chen, Chew Hoe Ang, Lap Chan
    Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:19-30 [Journal]
  5. Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan
    Impact of negative bias temperature instability on digital circuit reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:31-38 [Journal]
  6. Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes
    Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:39-46 [Journal]
  7. Terence B. Hook, Ronald Bolam, William Clark, Jay Burnham, Nivo Rovedo, Laura Schutz
    Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:47-56 [Journal]
  8. Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka, Akitaka Yoshigoe
    Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:57-64 [Journal]
  9. Shimpei Tsujikawa, Jiro Yugami
    Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:65-69 [Journal]
  10. M. A. Alam, S. Mahapatra
    A comprehensive model of PMOS NBTI degradation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:71-81 [Journal]
  11. V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent
    A thorough investigation of MOSFETs NBTI degradation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:83-98 [Journal]
  12. Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters
    Degradation dynamics, recovery, and characterization of negative bias temperature instability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:99-105 [Journal]
  13. Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal Mielke, Ramez Nachman
    The impact of PMOST bias-temperature degradation on logic circuit reliability performance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:107-114 [Journal]
  14. Ninoslav Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic, S. Dimitrijev
    Effects of electrical stressing in power VDMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:115-122 [Journal]
  15. E. Atanassova, R. V. Konakova, V. F. Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska
    Effect of microwave radiation on the properties of Ta2O5-Si microstructures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:123-135 [Journal]
  16. Jian Chen, Jianbin Xu, K. Xue, J. An, Ning Ke, W. Cao, H. B. Xia, J. Shi, D. C. Tian
    Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC60 films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:137-142 [Journal]
  17. Y. C. Lin, X. Chen, Xingsheng Liu, Guo-Quan Lu
    Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:143-154 [Journal]
  18. Ming-e Jing, Yue Hao, Jin-feng Zhang, Peijun Ma
    Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:155-162 [Journal]
  19. Andrej Zemva, Baldomir Zajc
    Test generation for technology-specific multi-faults based on detectable perturbations. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:163-173 [Journal]
  20. E. Miranda, B. Brandala
    A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:175-178 [Journal]
  21. Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen, Robert Liu
    Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:179-184 [Journal]
  22. Weifeng Sun, Longxing Shi
    Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:185-190 [Journal]
  23. P. A. Martínez Martínez, B. M. Monge Sanz
    Single resistance controlled oscillator using unity gain cells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:191-194 [Journal]
  24. Mile K. Stojcev
    Analog IP blocks. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:195-196 [Journal]
  25. Mile K. Stojcev
    Layout-mixed-signal. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:1, pp:197-198 [Journal]
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