Journals in DBLP
L. J. Balk , W. H. Gerling , E. Wolfgang Editorial. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1401-1402 [Journal ] A. J. van Roosmalen , G. Q. Zhang Reliability challenges in the nanoelectronics era. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1403-1414 [Journal ] Hideaki Tsuchiya , Shinji Yokogawa Electromigration lifetimes and void growth at low cumulative failure probability. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1415-1420 [Journal ] Mogens Blanke , Jesper Sandberg Thomsen Electrical steering of vehicles - fault-tolerant analysis and design. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1421-1432 [Journal ] M. Wagner , W. Unger , W. Wondrak Part average analysis - A tool for reducing failure rates in automotive electronics. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1433-1438 [Journal ] P. Tanduo , L. Cola , S. Testa , M. Menchise , A. Mervic Read disturb in flash memories: reliability case. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1439-1444 [Journal ] O. Briat , W. Lajnef , J.-M. Vinassa , E. Woirgard Power cycling tests for accelerated ageing of ultracapacitors. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1445-1450 [Journal ] S. Charruau , F. Guerin , J. Hernández Dominguez , J. Berthon Reliability estimation of aeronautic component by accelerated tests. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1451-1457 [Journal ] Liming Gao , Christian Burmer , Frank Siegelin ATPG scan logic failure analysis: a case study of logic ICs - fault isolation, defect mechanism identification and yield improvement. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1458-1463 [Journal ] C. R. Parthasarathy , M. Denais , V. Huard , G. Ribes , D. Roy , C. Guérin , F. Perrier , E. Vincent , A. Bravaix Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal ] R. L. J. M. Ubachs , O. van der Sluis , W. D. van Driel , G. Q. Zhang Multiscale modelling of multilayer substrates. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1472-1477 [Journal ] A. Chimenton , F. Irrera , P. Olivo Improving performance and reliability of NOR-Flash arrays by using pulsed operation. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1478-1481 [Journal ] Christophe Entringer , Philippe Flatresse , Philippe Galy , Florence Azaïs , Pascal Nouet Electro-thermal short pulsed simulation for SOI technology. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1482-1485 [Journal ] Christian Burmer , Siegfried Görlich Failure analyses for debug and ramp-up of modern IC's. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1486-1497 [Journal ] Rudolf Schlangen , Peter Sadewater , Uwe Kerst , Christian Boit Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1498-1503 [Journal ] Radu Ispasoiu , Tom Crawford , Brian Johnston , Chris Shaw , Steven Kasapi , Jason Goertz , Olivier Rinaudo , Peter Ouimet Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1504-1507 [Journal ] O. Breitenstein , F. Altmann , T. Riediger , D. Karg , V. Gottschalk Lock-in thermal IR imaging using a solid immersion lens. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1508-1513 [Journal ] A. Douin , V. Pouget , M. De Matos , D. Lewis , Philippe Perdu , P. Fouillat Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1514-1519 [Journal ] J. M. Rampnoux , H. Michel , M. Amine Salhi , Stéphane Grauby , Wilfrid Claeys , Stefan Dilhaire Time gating imaging through thick silicon substrate: a new step towards backside characterisation. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1520-1524 [Journal ] A. Altes , R. Tilgner , W. Walter Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1525-1529 [Journal ] S. Courtas , M. Grégoire , X. Federspiel , N. Bicaïs-Lépinay , C. Wyon Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1530-1535 [Journal ] Marco Buzzo , Mauro Ciappa , Wolfgang Fichtner Characterization of photonic devices by secondary electron potential contrast. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1536-1541 [Journal ] Yasunori Goto , Tomokatsu Higuchi A 3D analysis technique for detecting trace metal contamination. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1542-1547 [Journal ] R. A. Nicholson , H. Suri Physical-to-Logical Mapping of Emission Data using Place-and-Route. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1548-1553 [Journal ] N. Rodriguez , J. Adrian , C. Grosjean , G. Haller , C. Girardeaux , A. Portavoce Evaluation of scanning capacitance microscopy sample preparation by focused ion beam. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1554-1557 [Journal ] Zhongling Qian , Frank Siegelin , Birgit Tippelt , Stefan Müller Localization and physical analysis of a complex SRAM failure in 90nm technology. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1558-1562 [Journal ] F. Essely , F. Darracq , V. Pouget , M. Remmach , Felix Beaudoin , N. Guitard , M. Bafleur , Philippe Perdu , A. Touboul , D. Lewis Application of various optical techniques for ESD defect localization. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1563-1568 [Journal ] C. De Nardi , Romain Desplats , Philippe Perdu , J.-L. Gauffier , C. Guérin Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1569-1574 [Journal ] M. Sanada , Y. Yoshizawa Fault diagnosis technology based on transistor behavior analysis for physical analysis. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1575-1580 [Journal ] A. S. Oates , S. C. Lee Electromigration failure distributions of dual damascene Cu /low - k interconnects. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1581-1586 [Journal ] Heinrich Wolf , Horst A. Gieser , Detlef Bonfert , Markus Hauser ESD Susceptibility of Submicron Air Gaps. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1587-1590 [Journal ] M. Heer , V. Dubec , Scrgey Bychikhin , Dionyz Pogany , E. Gornik , M. Frank , A. Konrad , J. Schulz Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1591-1596 [Journal ] D. Alvarez , M. J. Abou-Khalil , C. Russ , Kiran V. Chatty , Robert Gauthier , D. Kontos , J. Li , C. Seguin , R. Halbach Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1597-1602 [Journal ] T. Pompl , A. Kerber , M. Röhner , M. Kerber Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1603-1607 [Journal ] R. Fernández , R. Rodríguez , M. Nafría , X. Aymerich , B. Kaczer , G. Groeseneken FinFET and MOSFET preliminary comparison of gate oxide reliability. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1608-1611 [Journal ] Tze Wee Chen , Choshu Ito , William Loh , Robert W. Dutton Post-breakdown leakage resistance and its dependence on device area. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1612-1616 [Journal ] Cora Salm , A. J. Hof , Fred G. Kuper , J. Schmitz Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1617-1622 [Journal ] Gerald Lucovsky , H. Seo , L. B. Fleming , M. D. Ulrich , J. Lüning , Patrick Lysaght , Gennadi Bersuker Intrinsic bonding defects in transition metal elemental oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1623-1628 [Journal ] Detlef Bonfert , Horst A. Gieser , Heinrich Wolf , M. Frank , A. Konrad , J. Schulz Transient-induced latch-up test setup for wafer-level and package-level. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1629-1633 [Journal ] J. T. Jang , Y. C. Kim , W. H. Bong , E. K. Kwon , B. J. Kwon , J. S. Jeon , H. G. Kim , I. H. Son A new high-voltage tolerant I/O for improving ESD robustness. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1634-1637 [Journal ] Cher Ming Tan , Wei Li , Kok Tong Tan , Frankie Low Development of highly accelerated electromigration test. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1638-1642 [Journal ] J. R. Lloyd , C. E. Murray , S. Ponoth , S. Cohen , E. Liniger The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1643-1647 [Journal ] M. Goroll , W. Kanert , R. Pufall ESD protection structure qualification - a new approach for release for automotive applications. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1648-1651 [Journal ] Arijit Roy , Cher Ming Tan Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1652-1656 [Journal ] J. M. Rafí , E. Simoen , K. Hayama , A. Mercha , F. Campabadal , H. Ohyama , C. Claeys Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1657-1663 [Journal ] Kyoung-Sik Im , Jae-Hyok Ko , Suk-Jin Kim , Chan-Hee Jeon , Chang-Su Kim , Ki-Tae Lee , Han-Gu Kim , Il-Hun Son Novel ESD strategy for high voltage non-volatile programming pin application. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1664-1668 [Journal ] S. Gerardin , A. Griffoni , A. Cester , A. Paccagnella , G. Ghidini Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1669-1672 [Journal ] Robin C. J. Wang , C. C. Lee , L. D. Chen , Kenneth Wu , K. S. Chang-Liao A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1673-1678 [Journal ] C. Yuan , W. D. van Driel , R. van Silfhout , O. van der Sluis , R. A. B. Engelen , L. J. Ernst , F. van Keulen , G. Q. Zhang Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1679-1684 [Journal ] B. Wunderle , B. Michel Progress in reliability research in the micro and nano region. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1685-1694 [Journal ] M. Exarchos , E. Papandreou , P. Pons , M. Lamhamdi , G. J. Papaioannou , R. Plana Charging of radiation induced defects in RF MEMS dielectric films. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1695-1699 [Journal ] M. Lamhamdi , J. Guastavino , L. Boudou , Y. Segui , P. Pons , L. Bouscayrol , R. Plana Charging-Effects in RF capacitive switches influence of insulating layers composition. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1700-1704 [Journal ] C. Palego , A. Pothier , A. Crunteanu , P. Blondy High power reliability aspects on RF MEMS varactor design. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1705-1710 [Journal ] P. Jacob , A. Kunz , G. Nicoletti Reliability and wearout characterisation of LEDs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1711-1714 [Journal ] M. Boutillier , O. Gauthier-Lafaye , S. Bonnefont , F. Lozes-Dupuy , F.-J. Vermersch , M. Krakowski , O. Gilard Strong electron irradiation hardness of 852 nm Al-free laser diodes. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1715-1719 [Journal ] M. Meneghini , Simona Podda , A. Morelli , Ruggero Pintus , L. Trevisanello , Gaudenzio Meneghesso , Massimo Vanzi , Enrico Zanoni High brightness GaN LEDs degradation during dc and pulsed stress. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1720-1724 [Journal ] A. Sozza , A. Curutchet , C. Dua , N. Malbert , N. Labat , A. Touboul AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1725-1730 [Journal ] K. Hayama , K. Takakura , K. Shigaki , H. Ohyama , J. M. Rafí , A. Mercha , E. Simoen , C. Claeys Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1731-1735 [Journal ] W. Bergbauer , T. Lutz , Werner Frammelsberger , Guenther Benstetter Kelvin probe force microscopy - An appropriate tool for the electrical characterisation of LED heterostructures. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1736-1740 [Journal ] A. Crunteanu , A. Pothier , P. Blondy , F. Dumas-Bouchiat , C. Champeaux , A. Catherinot , P. Tristant , O. Vendier , C. Drevon , J. L. Cazaux Gamma radiation effects on RF MEMS capacitive switches. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1741-1746 [Journal ] A. V. Krivosheeva , V. L. Shaposhnikov , V. V. Lyskouski , V. E. Borisenko , F. Arnaud d'Avitaya , J.-L. Lazzari Prospects on Mn-doped ZnGeP2 for spintronics. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1747-1749 [Journal ] Francesca Danesin , F. Zanon , S. Gerardin , F. Rampazzo , Gaudenzio Meneghesso , Enrico Zanoni , A. Paccagnella Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1750-1753 [Journal ] Alberto Castellazzi , Mauro Ciappa , Wolfgang Fichtner , G. Lourdel , Michel Mermet-Guyennet Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1754-1759 [Journal ] P. Cova , N. Delmonte , Roberto Menozzi Thermal characterization and modeling of power hybrid converters for distributed power systems. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1760-1765 [Journal ] L. Dupont , Z. Khatir , S. Lefebvre , S. Bontemps Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1766-1771 [Journal ] D. Barlini , Mauro Ciappa , Alberto Castellazzi , Michel Mermet-Guyennet , Wolfgang Fichtner New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1772-1777 [Journal ] A. Benmansour , S. Azzopardi , J. C. Martin , E. Woirgard Failure mechanism of trench IGBT under short-circuit after turn-off. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1778-1783 [Journal ] A. Irace , G. Breglio , P. Spirito , A. Bricconi , D. Raffo , L. Merlin Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1784-1789 [Journal ] F. Iannuzzo , G. Busatto , C. Abbate Investigation of MOSFET failure in soft-switching conditions. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1790-1794 [Journal ] G. Cassanelli , G. Mura , Fausto Fantini , Massimo Vanzi , B. Plano Failure Analysis-assisted FMEA. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1795-1799 [Journal ] M. A. Belaïd , K. Ketata , M. Masmoudi , M. Gares , H. Maanane , J. Marcon Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1800-1805 [Journal ] M. Gares , H. Maanane , M. Masmoudi , P. Bertram , J. Marcon , M. A. Belaïd , K. Mourgues , C. Tolant , Ph. Eudeline Hot carrier reliability of RF N- LDMOS for S Band radar application. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1806-1811 [Journal ] Chuanzhao Yu , J. S. Yuan , Enjun Xiao Dynamic voltage stress effects on nMOS varactor. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1812-1816 [Journal ] C. Moreau , P. Le Helleye , D. Ruelloux A complete RF power technology assessment for military applications. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1817-1822 [Journal ] Guang Yu Huang , Cher Ming Tan Device level electrical-thermal-stress coupled-field modeling. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1823-1827 [Journal ] D. Dankovic , I. Manic , S. Djoric-Veljkovic , V. Davidovic , S. Golubovic , Ninoslav Stojadinovic NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1828-1833 [Journal ] X. Perpiñà , J. F. Serviere , J. Saiz , D. Barlini , Michel Mermet-Guyennet , J. Millán Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1834-1839 [Journal ] C. Yu , L. Jiang , J. S. Yuan Study of performance degradations in DC-DC converter due to hot carrier stress by simulation. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1840-1843 [Journal ] P. Zimprich , T. Licht , B. Weiss A new method to characterize the thermomechanical response of multilayered structures in power electronics. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1844-1847 [Journal ] C. Abbate , G. Busatto , L. Fratelli , F. Iannuzzo The high frequency behaviour of high voltage and current IGBT modules. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1848-1853 [Journal ] G. Busatto , F. Iannuzzo , A. Porzio , A. Sanseverino , F. Velardi , G. Currò Experimental study of power MOSFET's gate damage in radiation environment. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1854-1857 [Journal ] Jingchao Wang , Edgar Olthof , Wim Metselaar Hot-carrier degradation analysis based on ring oscillators. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1858-1863 [Journal ] In Kyung Lee , Se Re Na Yun , Kyo Sun Kim , Chong-Gun Yu , Jong-Tae Park New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1864-1867 [Journal ] R. Plieninger , M. Dittes , K. Pressel Modern IC packaging trends and their reliability implications. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1868-1873 [Journal ] M. C. Yew , C. Y. Chou , C. S. Huang , W. K. Yang , K. N. Chiang The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1874-1879 [Journal ] W. D. van Driel , O. van der Sluis , D. G. Yang , R. L. J. M. Ubachs , C. Zenz , G. Aflenzer , G. Q. Zhang Reliability modelling for packages in flexible end-products. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1880-1885 [Journal ] W. C. Maia Filho , M. Brizoux , H. Frémont , Y. Danto Improved physical understanding of intermittent failure in continuous monitoring method. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1886-1891 [Journal ] H. C. Yeo , N. Guo , H. Du , W. M. Huang , X. M. Jian Characterisation of IC packaging interfaces and loading effects. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1892-1897 [Journal ]