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Microelectronics Reliability
2006, volume: 46, number: 9-11

  1. L. J. Balk, W. H. Gerling, E. Wolfgang
    Editorial. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1401-1402 [Journal]
  2. A. J. van Roosmalen, G. Q. Zhang
    Reliability challenges in the nanoelectronics era. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1403-1414 [Journal]
  3. Hideaki Tsuchiya, Shinji Yokogawa
    Electromigration lifetimes and void growth at low cumulative failure probability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1415-1420 [Journal]
  4. Mogens Blanke, Jesper Sandberg Thomsen
    Electrical steering of vehicles - fault-tolerant analysis and design. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1421-1432 [Journal]
  5. M. Wagner, W. Unger, W. Wondrak
    Part average analysis - A tool for reducing failure rates in automotive electronics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1433-1438 [Journal]
  6. P. Tanduo, L. Cola, S. Testa, M. Menchise, A. Mervic
    Read disturb in flash memories: reliability case. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1439-1444 [Journal]
  7. O. Briat, W. Lajnef, J.-M. Vinassa, E. Woirgard
    Power cycling tests for accelerated ageing of ultracapacitors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1445-1450 [Journal]
  8. S. Charruau, F. Guerin, J. Hernández Dominguez, J. Berthon
    Reliability estimation of aeronautic component by accelerated tests. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1451-1457 [Journal]
  9. Liming Gao, Christian Burmer, Frank Siegelin
    ATPG scan logic failure analysis: a case study of logic ICs - fault isolation, defect mechanism identification and yield improvement. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1458-1463 [Journal]
  10. C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix
    Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal]
  11. R. L. J. M. Ubachs, O. van der Sluis, W. D. van Driel, G. Q. Zhang
    Multiscale modelling of multilayer substrates. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1472-1477 [Journal]
  12. A. Chimenton, F. Irrera, P. Olivo
    Improving performance and reliability of NOR-Flash arrays by using pulsed operation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1478-1481 [Journal]
  13. Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azaïs, Pascal Nouet
    Electro-thermal short pulsed simulation for SOI technology. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1482-1485 [Journal]
  14. Christian Burmer, Siegfried Görlich
    Failure analyses for debug and ramp-up of modern IC's. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1486-1497 [Journal]
  15. Rudolf Schlangen, Peter Sadewater, Uwe Kerst, Christian Boit
    Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1498-1503 [Journal]
  16. Radu Ispasoiu, Tom Crawford, Brian Johnston, Chris Shaw, Steven Kasapi, Jason Goertz, Olivier Rinaudo, Peter Ouimet
    Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1504-1507 [Journal]
  17. O. Breitenstein, F. Altmann, T. Riediger, D. Karg, V. Gottschalk
    Lock-in thermal IR imaging using a solid immersion lens. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1508-1513 [Journal]
  18. A. Douin, V. Pouget, M. De Matos, D. Lewis, Philippe Perdu, P. Fouillat
    Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1514-1519 [Journal]
  19. J. M. Rampnoux, H. Michel, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys, Stefan Dilhaire
    Time gating imaging through thick silicon substrate: a new step towards backside characterisation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1520-1524 [Journal]
  20. A. Altes, R. Tilgner, W. Walter
    Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1525-1529 [Journal]
  21. S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lépinay, C. Wyon
    Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1530-1535 [Journal]
  22. Marco Buzzo, Mauro Ciappa, Wolfgang Fichtner
    Characterization of photonic devices by secondary electron potential contrast. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1536-1541 [Journal]
  23. Yasunori Goto, Tomokatsu Higuchi
    A 3D analysis technique for detecting trace metal contamination. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1542-1547 [Journal]
  24. R. A. Nicholson, H. Suri
    Physical-to-Logical Mapping of Emission Data using Place-and-Route. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1548-1553 [Journal]
  25. N. Rodriguez, J. Adrian, C. Grosjean, G. Haller, C. Girardeaux, A. Portavoce
    Evaluation of scanning capacitance microscopy sample preparation by focused ion beam. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1554-1557 [Journal]
  26. Zhongling Qian, Frank Siegelin, Birgit Tippelt, Stefan Müller
    Localization and physical analysis of a complex SRAM failure in 90nm technology. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1558-1562 [Journal]
  27. F. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis
    Application of various optical techniques for ESD defect localization. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1563-1568 [Journal]
  28. C. De Nardi, Romain Desplats, Philippe Perdu, J.-L. Gauffier, C. Guérin
    Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1569-1574 [Journal]
  29. M. Sanada, Y. Yoshizawa
    Fault diagnosis technology based on transistor behavior analysis for physical analysis. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1575-1580 [Journal]
  30. A. S. Oates, S. C. Lee
    Electromigration failure distributions of dual damascene Cu /low - k interconnects. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1581-1586 [Journal]
  31. Heinrich Wolf, Horst A. Gieser, Detlef Bonfert, Markus Hauser
    ESD Susceptibility of Submicron Air Gaps. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1587-1590 [Journal]
  32. M. Heer, V. Dubec, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, M. Frank, A. Konrad, J. Schulz
    Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1591-1596 [Journal]
  33. D. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach
    Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1597-1602 [Journal]
  34. T. Pompl, A. Kerber, M. Röhner, M. Kerber
    Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1603-1607 [Journal]
  35. R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken
    FinFET and MOSFET preliminary comparison of gate oxide reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1608-1611 [Journal]
  36. Tze Wee Chen, Choshu Ito, William Loh, Robert W. Dutton
    Post-breakdown leakage resistance and its dependence on device area. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1612-1616 [Journal]
  37. Cora Salm, A. J. Hof, Fred G. Kuper, J. Schmitz
    Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1617-1622 [Journal]
  38. Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker
    Intrinsic bonding defects in transition metal elemental oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1623-1628 [Journal]
  39. Detlef Bonfert, Horst A. Gieser, Heinrich Wolf, M. Frank, A. Konrad, J. Schulz
    Transient-induced latch-up test setup for wafer-level and package-level. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1629-1633 [Journal]
  40. J. T. Jang, Y. C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son
    A new high-voltage tolerant I/O for improving ESD robustness. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1634-1637 [Journal]
  41. Cher Ming Tan, Wei Li, Kok Tong Tan, Frankie Low
    Development of highly accelerated electromigration test. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1638-1642 [Journal]
  42. J. R. Lloyd, C. E. Murray, S. Ponoth, S. Cohen, E. Liniger
    The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1643-1647 [Journal]
  43. M. Goroll, W. Kanert, R. Pufall
    ESD protection structure qualification - a new approach for release for automotive applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1648-1651 [Journal]
  44. Arijit Roy, Cher Ming Tan
    Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1652-1656 [Journal]
  45. J. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys
    Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1657-1663 [Journal]
  46. Kyoung-Sik Im, Jae-Hyok Ko, Suk-Jin Kim, Chan-Hee Jeon, Chang-Su Kim, Ki-Tae Lee, Han-Gu Kim, Il-Hun Son
    Novel ESD strategy for high voltage non-volatile programming pin application. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1664-1668 [Journal]
  47. S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini
    Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1669-1672 [Journal]
  48. Robin C. J. Wang, C. C. Lee, L. D. Chen, Kenneth Wu, K. S. Chang-Liao
    A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1673-1678 [Journal]
  49. C. Yuan, W. D. van Driel, R. van Silfhout, O. van der Sluis, R. A. B. Engelen, L. J. Ernst, F. van Keulen, G. Q. Zhang
    Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1679-1684 [Journal]
  50. B. Wunderle, B. Michel
    Progress in reliability research in the micro and nano region. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1685-1694 [Journal]
  51. M. Exarchos, E. Papandreou, P. Pons, M. Lamhamdi, G. J. Papaioannou, R. Plana
    Charging of radiation induced defects in RF MEMS dielectric films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1695-1699 [Journal]
  52. M. Lamhamdi, J. Guastavino, L. Boudou, Y. Segui, P. Pons, L. Bouscayrol, R. Plana
    Charging-Effects in RF capacitive switches influence of insulating layers composition. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1700-1704 [Journal]
  53. C. Palego, A. Pothier, A. Crunteanu, P. Blondy
    High power reliability aspects on RF MEMS varactor design. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1705-1710 [Journal]
  54. P. Jacob, A. Kunz, G. Nicoletti
    Reliability and wearout characterisation of LEDs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1711-1714 [Journal]
  55. M. Boutillier, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, O. Gilard
    Strong electron irradiation hardness of 852 nm Al-free laser diodes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1715-1719 [Journal]
  56. M. Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni
    High brightness GaN LEDs degradation during dc and pulsed stress. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1720-1724 [Journal]
  57. A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul
    AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1725-1730 [Journal]
  58. K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys
    Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1731-1735 [Journal]
  59. W. Bergbauer, T. Lutz, Werner Frammelsberger, Guenther Benstetter
    Kelvin probe force microscopy - An appropriate tool for the electrical characterisation of LED heterostructures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1736-1740 [Journal]
  60. A. Crunteanu, A. Pothier, P. Blondy, F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, P. Tristant, O. Vendier, C. Drevon, J. L. Cazaux
    Gamma radiation effects on RF MEMS capacitive switches. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1741-1746 [Journal]
  61. A. V. Krivosheeva, V. L. Shaposhnikov, V. V. Lyskouski, V. E. Borisenko, F. Arnaud d'Avitaya, J.-L. Lazzari
    Prospects on Mn-doped ZnGeP2 for spintronics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1747-1749 [Journal]
  62. Francesca Danesin, F. Zanon, S. Gerardin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, A. Paccagnella
    Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1750-1753 [Journal]
  63. Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet
    Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1754-1759 [Journal]
  64. P. Cova, N. Delmonte, Roberto Menozzi
    Thermal characterization and modeling of power hybrid converters for distributed power systems. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1760-1765 [Journal]
  65. L. Dupont, Z. Khatir, S. Lefebvre, S. Bontemps
    Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1766-1771 [Journal]
  66. D. Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner
    New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1772-1777 [Journal]
  67. A. Benmansour, S. Azzopardi, J. C. Martin, E. Woirgard
    Failure mechanism of trench IGBT under short-circuit after turn-off. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1778-1783 [Journal]
  68. A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, L. Merlin
    Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1784-1789 [Journal]
  69. F. Iannuzzo, G. Busatto, C. Abbate
    Investigation of MOSFET failure in soft-switching conditions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1790-1794 [Journal]
  70. G. Cassanelli, G. Mura, Fausto Fantini, Massimo Vanzi, B. Plano
    Failure Analysis-assisted FMEA. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1795-1799 [Journal]
  71. M. A. Belaïd, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon
    Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1800-1805 [Journal]
  72. M. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, Ph. Eudeline
    Hot carrier reliability of RF N- LDMOS for S Band radar application. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1806-1811 [Journal]
  73. Chuanzhao Yu, J. S. Yuan, Enjun Xiao
    Dynamic voltage stress effects on nMOS varactor. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1812-1816 [Journal]
  74. C. Moreau, P. Le Helleye, D. Ruelloux
    A complete RF power technology assessment for military applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1817-1822 [Journal]
  75. Guang Yu Huang, Cher Ming Tan
    Device level electrical-thermal-stress coupled-field modeling. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1823-1827 [Journal]
  76. D. Dankovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic
    NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1828-1833 [Journal]
  77. X. Perpiñà, J. F. Serviere, J. Saiz, D. Barlini, Michel Mermet-Guyennet, J. Millán
    Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1834-1839 [Journal]
  78. C. Yu, L. Jiang, J. S. Yuan
    Study of performance degradations in DC-DC converter due to hot carrier stress by simulation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1840-1843 [Journal]
  79. P. Zimprich, T. Licht, B. Weiss
    A new method to characterize the thermomechanical response of multilayered structures in power electronics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1844-1847 [Journal]
  80. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo
    The high frequency behaviour of high voltage and current IGBT modules. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1848-1853 [Journal]
  81. G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò
    Experimental study of power MOSFET's gate damage in radiation environment. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1854-1857 [Journal]
  82. Jingchao Wang, Edgar Olthof, Wim Metselaar
    Hot-carrier degradation analysis based on ring oscillators. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1858-1863 [Journal]
  83. In Kyung Lee, Se Re Na Yun, Kyo Sun Kim, Chong-Gun Yu, Jong-Tae Park
    New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1864-1867 [Journal]
  84. R. Plieninger, M. Dittes, K. Pressel
    Modern IC packaging trends and their reliability implications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1868-1873 [Journal]
  85. M. C. Yew, C. Y. Chou, C. S. Huang, W. K. Yang, K. N. Chiang
    The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1874-1879 [Journal]
  86. W. D. van Driel, O. van der Sluis, D. G. Yang, R. L. J. M. Ubachs, C. Zenz, G. Aflenzer, G. Q. Zhang
    Reliability modelling for packages in flexible end-products. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1880-1885 [Journal]
  87. W. C. Maia Filho, M. Brizoux, H. Frémont, Y. Danto
    Improved physical understanding of intermittent failure in continuous monitoring method. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1886-1891 [Journal]
  88. H. C. Yeo, N. Guo, H. Du, W. M. Huang, X. M. Jian
    Characterisation of IC packaging interfaces and loading effects. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1892-1897 [Journal]
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