Journals in DBLP

Microelectronics Journal
2006, volume: 37, number: 3

1. Vitezslav Benda
   The quest for optimum construction and technology of power semiconductor devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:189- [Journal]
   
2. Federica Cappelluti, F. Bonani, M. Furno, Giovanni Ghione, R. Carta, L. Bellemo, C. Bocchiola, L. Merlin
   Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:190-196 [Journal]
   
3. P. Hazdra, V. Komarnitskyy
   Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:197-203 [Journal]
   
4. Ralf Siemieniec, H.-J. Schulze, F.-J. Niedernostheide, W. Südkamp, Josef Lutz
   Compensation and doping effects in heavily helium-radiated silicon for power device applications. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:204-212 [Journal]
   
5. M. Cerník
   Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:213-216 [Journal]
   
6. V. Benda, M. Cernik, V. Papez
   OCVD carrier lifetime in P⁺NN⁺ diode structures with axial carrier lifetime gradient. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:217-222 [Journal]
   
7. A. Bourennane, M. Breil, J. L. Sanchez, J. Jalade
   A vertical monolithical MOS thyristor bi-directional device. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:223-230 [Journal]
   
8. In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Yearn-Ik Choi, Min-Koo Han
   A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:231-235 [Journal]
   
9. J. Vobecký, D. Kolesnikov
   The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2006, v:37, n:3, pp:236-242 [Journal]
   
10. M. Knaipp, J. M. Park, V. Vescoli
    Evolution of a CMOS Based Lateral High Voltage Technology Concept. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2006, v:37, n:3, pp:243-248 [Journal]
    
11. C. Caramel, P. Austin, J. L. Sanchez, E. Imbernon, M. Breil
    Integrated IGBT short-circuit protection structure: Design and optimization. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2006, v:37, n:3, pp:249-256 [Journal]
    
12. I. Bertrand, Jean-Marie Dilhac, P. Renaud, Christian Ganibal
    Large area recrystallization of thick polysilicon films for low cost partial SOI power devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2006, v:37, n:3, pp:257-261 [Journal]
    
13. Masayasu Ishiko, Masanori Usui, Takashi Ohuchi, Mikio Shirai
    Design concept for wire-bonding reliability improvement by optimizing position in power devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2006, v:37, n:3, pp:262-268 [Journal]
    
14. B. Kojecký, V. Papez, D. Sámal
    Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2006, v:37, n:3, pp:269-274 [Journal]