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Journals in DBLP

Microelectronics Journal
2005, volume: 36, number: 3-6

  1. Mohamed Henini, Isaac Hernández-Calderón
    Preface. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:173-174 [Journal]
  2. Dieter Bimberg, Matthias Kuntz, Matthias Laemmlin
    Quantum dot photonic devices for lightwave communication. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:175-179 [Journal]
  3. V. Tasco, B. Potì, M. De Vittorio, M. De Giorgi, R. Cingolani, A. Passaseo
    Improved performances of 1.3mum InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:180-182 [Journal]
  4. G. Sun, Richard A. Soref, Jacob B. Khurgin
    A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:183-185 [Journal]
  5. T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra, Eu. Shcherbina
    Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:186-189 [Journal]
  6. J. S. Yim, J. H. Lee, Y. D. Jang, M. D. Kim, D. Lee, H. D. Kim, S. H. Pyun, W. G. Jeong, J. S. Kim, S. U. Hong
    Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:190-193 [Journal]
  7. A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais
    Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:194-196 [Journal]
  8. S. Frederick, D. Dalacu, D. Poitras, G. C. Aers, P. J. Poole, J. Lefebvre, D. Chithrani, R. L. Williams
    Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:197-199 [Journal]
  9. M. De Giorgi, G. Rainò, T. Todaro, M. De Vittorio, V. Tasco, A. Passaseo, R. Cingolani
    Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:200-202 [Journal]
  10. S. H. Hwang, J. C. Shin, J. D. Song, W. J. Choi, J. I. Lee, H. Han
    Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:203-206 [Journal]
  11. Daniel S. Raimundo, Adriana B. Stelet, Francisco J. R. Fernandez, Walter J. Salcedo
    Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:207-211 [Journal]
  12. Raphael Tsu
    Stability issues in tunneling via quantum systems. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:212-215 [Journal]
  13. Takashi Hanada, Takafumi Yao
    Formation and evolution of strain-induced self-assembled dot. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:216-218 [Journal]
  14. S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy
    Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:219-222 [Journal]
  15. B. Sherliker, P. Harmer, M. P. Halsall, P. Buckle, P. J. Parbrook, T. Wang
    Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:223-226 [Journal]
  16. H. Pettersson, L. Landin, Ying Fu, M. Kleverman, M. Borgström, W. Seifert, L. Samuelson
    Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:227-230 [Journal]
  17. C. A. Duque, N. Porras-Montenegro, Z. Barticevic, M. Pacheco, L. E. Oliveira
    Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:231-233 [Journal]
  18. N. O. Dantas, A. F. G. Monte, W. A. Cardoso, A. G. Brito-Madurro, J. M. Madurro, Paulo César de Morais
    Growth and characterisation of ZnO quantum dots in polyacrylamide. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:234-236 [Journal]
  19. A. Andreev, F. Quochi, H. Sitter, H. Hoppe, S. Sariciftci, A. Mura, G. Bongiovanni
    Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:237-240 [Journal]
  20. A. M. Alcalde, O. O. Diniz Neto, G. E. Marques
    Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:241-243 [Journal]
  21. F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges
    The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:244-246 [Journal]
  22. K. Ikeda, F. Minami, N. Koguchi
    Acoustical phonon dephasing in GaAs quantum dots. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:247-249 [Journal]
  23. K. Daneshvar, K. Kang, R. Tsu
    Three-dimensional quantum dot array. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:250-252 [Journal]
  24. Alexander N. Korotkov
    Quantum feedback of a double-dot qubit. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:253-255 [Journal]
  25. G. J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston
    Design of InAs/Ga(In)Sb superlattices for infrared sensing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:256-259 [Journal]
  26. M. El Tahchi, E. Nassar, P. Mialhe
    Study and development of a silicon infrared diode operating under forward bias. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:260-263 [Journal]
  27. I. A. Sukhoivanov, O. V. Mashoshyna, V. K. Kononenko, D. V. Ushakov
    How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:264-268 [Journal]
  28. Keiko Takase, Yukio Kawano, Tohru Okamoto
    Time response of a highly sensitive and tunable THz detector using the quantum hall effect. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:269-271 [Journal]
  29. Kameshwar K. Yadavalli, Alexei O. Orlov, Gregory L. Snider, Jeffrey Elam
    Aluminum oxide tunnel barriers for single electron memory devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:272-276 [Journal]
  30. M. D. B. Charlton, M. E. Zoorob, M. C. Netti, N. Perney, G. J. Parker, P. Ayliffe, J. J. Baumberg
    Realisation of ultra-low loss photonic crystal slab waveguide devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:277-281 [Journal]
  31. Jiun Haw Chu, O. Voskoboynikov, C. P. Lee
    Slow light in photonic crystals. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:282-284 [Journal]
  32. O. Bendix, J. A. Méndez-Bermúdez, G. A. Luna-Acosta, U. Kuhl, H.-J. Stöckmann
    Design of beam splitters and microlasers using chaotic waveguides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:285-288 [Journal]
  33. José Azaña, Mykola Kulishov
    Optical pulse shaping capabilities of grating-assisted codirectional couplers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:289-293 [Journal]
  34. Pratyush Das Kanungo, Alexandra Imre, Wu Bin, Alexei O. Orlov, Gregory L. Snider, Wolfgang Porod, Nicholas P. Carter
    Gated hybrid Hall effect device on silicon. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:294-297 [Journal]
  35. O'Dae Kwon, M. J. Kim, S.-J. An, D. K. Kim, S. E. Lee
    Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:298-300 [Journal]
  36. S. Mil'shtein, J. Palma
    Heterostructure transistor with tunable gate bias. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:301-303 [Journal]
  37. Ravi K. Kummamuru, Mo Liu, Alexei O. Orlov, Craig S. Lent, Gary H. Bernstein, Gregory L. Snider
    Temperature dependence of the locked mode in a single-electron latch. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:304-307 [Journal]
  38. Xiangning Luo, Alexei O. Orlov, Gregory L. Snider
    Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:308-312 [Journal]
  39. S. Mil'shtein, C. Gil, Peter Ersland
    Heterojunction semiconductor triode - a new vertical device. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:313-315 [Journal]
  40. S. Mil'shtein, C. Liessner
    High speed switch using pairs of pHEMTs with shifted gates. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:316-318 [Journal]
  41. S. Mil'shtein
    Shaping electrical field in heterostructure transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:319-322 [Journal]
  42. Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti
    Hole transport in p-channel Si MOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:323-326 [Journal]
  43. W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama
    Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:327-330 [Journal]
  44. C.-T. Liang, M. Kataoka, G. Faini, D. Mailly, M. Y. Simmons, A. W. Rushforth, C. G. Smith, D. A. Ritchie, M. Pepper
    Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:331-333 [Journal]
  45. Jesús Iñarrea, Gloria Platero
    Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:334-337 [Journal]
  46. N. L. Ivina, L. K. Orlov, V. B. Shevtsov, N. A. Alyabina
    Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:338-341 [Journal]
  47. J. C. Salcedo-Reyes, I. Hernández-Calderón
    Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:342-346 [Journal]
  48. S. J. Vlaev, I. Rodríguez-Vargas, L. M. Gaggero-Sager
    Mean life times of quasi-bound states in delta-doped GaAs quantum wells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:347-349 [Journal]
  49. Oleksiy V. Shulika, Ivan M. Safonov, Igor A. Sukhoivanov, Volodimir V. Lysak
    Quantum capture area in layered quantum well structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:350-355 [Journal]
  50. Y. Galvão Gobato, M. J. S. P. Brasil, I. Camps, H. B. de Carvalho, L. F. dos Santos, G. E. Marques, M. Henini, L. Eaves, G. Hill
    Charge buildup effects in asymmetric p-type resonant tunneling diodes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:356-358 [Journal]
  51. M. G. Bezerra, J. A. K. Freire, V. N. Freire, G. A. Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes
    Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:359-361 [Journal]
  52. Adrián Alfaro-Martínez, Isaac Hernández-Calderón
    Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:362-365 [Journal]
  53. R. G. Mani
    AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:366-368 [Journal]
  54. Carlos L. Beltrán Ríos, N. Porras-Montenegro
    Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:369-373 [Journal]
  55. Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta
    Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:374-378 [Journal]
  56. E. T. Croke, R. N. Schwartz, B. Shi, A. A. Narayanan, A. A. Kiselev, M. F. Gyure
    Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:379-382 [Journal]
  57. Pablo Villamil, Carlos Cabra, N. Porras-Montenegro
    Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:383-388 [Journal]
  58. Jhang W. Lee, Young Woo Ahn, Jae Ho Song, Byung Gyu Cho, Il Ho Ahn
    AlGaAs/InGaAs PHEMT with multiple quantum wire gates. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:389-391 [Journal]
  59. Jong Chang Yi
    Self-consistent analysis of the miniband structures in superlattice quantum wires. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:392-395 [Journal]
  60. M. L. Orlov, Yu. A. Romanov, L. K. Orlov
    Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:396-400 [Journal]
  61. P. Pereyra, A. Velasco-Chávez
    Absence of Wannier-Stark ladders in finite superlattices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:401-403 [Journal]
  62. I. Rodríguez-Vargas, L. M. Gaggero-Sager
    Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:404-406 [Journal]
  63. D. H. A. L. Anselmo, A. L. Dantas, S. K. Medeiros, G. A. Farias, E. L. Albuquerque
    Optical phonon modes confinement in quasiperiodic semiconductor superlattice. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:407-410 [Journal]
  64. Diosdado Villegas, Fernando de León-Pérez, Rolando Pérez-Alvarez
    Gaussian superlattice for phonons. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:411-412 [Journal]
  65. M. E. Mora-Ramos, V. Agarwal, J. A. Soto Urueta
    Propagation of light in quasi-regular dielectric heterostructures with delta-like layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:413-415 [Journal]
  66. L. M. Gaggero-Sager, M. E. Mora-Ramos, M. A. Olivares-Robles
    Calculation of electronic properties in AlxGa1-x delta-doped systems. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:416-418 [Journal]
  67. P. Pereyra, A. Anzaldo-Meneses
    Electronic transport and interfering phenomena induced by transverse electric field. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:419-421 [Journal]
  68. Hiroyuki Shima, Tsuneyoshi Nakayama
    Breakdown of Anderson localization in disordered quantum chains. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:422-424 [Journal]
  69. R. Nemutudi, C.-T. Liang, M. J. Murphy, H. E. Beere, C. G. Smith, D. A. Ritchie, M. Pepper, G. A. C. Jones
    Jain-Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:425-427 [Journal]
  70. Shang-Chia Chen, Shih-Kai Lin, Kun-Ta Wu, Chao-Ping Huang, Pen-Hsiu Chang, N. C. Chen, Chin-An Chang, Hsian-Chu Peng, Chuang-Feng Shih, Kuo-Shung Liu
    Transport measurements on MOVPE-grown InN films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:428-430 [Journal]
  71. R. B. de Almeida, A. N. Borges, P. C. M. Machado, F. A. P. Osório
    Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:431-433 [Journal]
  72. S. C. P. Rodrigues Jr., G. M. Sipahi Jr., E. F. da Silva
    Optical and electronic properties of AlInGaN/InGaN superlattices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:434-437 [Journal]
  73. P. Kordos, J. Bernát, M. Marso
    Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:438-441 [Journal]
  74. J. Misiewicz, R. Kudrawiec, M. Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala
    Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:442-445 [Journal]
  75. J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, A. Forchel
    Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:446-449 [Journal]
  76. G. Sun, Richard A. Soref
    Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:450-452 [Journal]
  77. H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, O. Monteiro
    Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:453-455 [Journal]
  78. R. Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe
    GaN nanodot fabrication by implant source growth. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:456-459 [Journal]
  79. Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry
    Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:460-462 [Journal]
  80. A. C. Bittencourt, J. F. Estanislau, G. E. Marques
    Spin-polarized charge fluctuations in magnetic tunneling diodes. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:463-465 [Journal]
  81. Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, D. A. Ritchie
    'Mobility gap' of a spin-split GaAs two-dimensional electron gas. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:466-468 [Journal]
  82. D. R. Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, D. A. Ritchie, I. Farrer, Y. W. Zhang, C.-T. Liang, Y. H. Chang
    Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:469-471 [Journal]
  83. O. Navarro, V. Men'shov, V. Tugushev
    Spin ordering in chromium layered structures with inserted nonmagnetic monolayers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:472-474 [Journal]
  84. M. S. Tomar, S. P. Singh, O. Perales-Perez, R. P. Guzman, E. Calderon, C. Rinaldi-Ramos
    Synthesis and magnetic behavior of nanostructured ferrites for spintronics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:475-479 [Journal]
  85. G. E. Marques, A. C. R. Bittencourt, V. Lopez-Richard, C. F. Destefani, Sergio E. Ulloa
    Spin carrier dynamics under full spin-orbit coupling. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:480-483 [Journal]
  86. K. C. Seo, G. H. Ihm, S. J. Lee
    Spin-polarized tunneling in an electromagnetic structure. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:484-487 [Journal]
  87. V. Tugushev, E. Kulatov, O. Navarro
    The mechanism of interlayer exchange coupling in silicon/iron layered structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:488-490 [Journal]
  88. S. P. Singh, M. S. Tomar, Y. Ishikawa
    Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:491-494 [Journal]
  89. G. Ortega-Cervantez, G. Rueda-Morales, J. Ortiz-López
    Catalytic CVD production of carbon nanotubes using ethanol. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:495-498 [Journal]
  90. Solange B. Fagan, S. Guerini, J. Mendes Filho, V. Lemos
    Lithium intercalation into single-wall carbon nanotube bundles. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:499-501 [Journal]
  91. V. Ovchinnikov, S. Novikov, T. Toivola, J. Sinkkonen
    Electroluminescence from B- and P-doped silicon nanoclusters. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:502-505 [Journal]
  92. A. Fissel, C. Wang, E. Bugiel, H. J. Osten
    Epitaxial growth of non-cubic silicon. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:506-509 [Journal]
  93. A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, S. Jiménez Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina
    Optical investigation of Si nano-crystals in amorphous silicon matrix. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:510-513 [Journal]
  94. E. Chambon, E. Florentin, T. Torchynska, J. González-Hernández, Y. Vorobiev
    Optical properties of porous silicon surface. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:514-517 [Journal]
  95. L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath
    Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:518-521 [Journal]
  96. M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena
    The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:522-526 [Journal]
  97. A. E. Martínez-Cantón, M. García-Rocha, I. Hernández-Calderón, R. Ortega-Martínez
    Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:527-530 [Journal]
  98. C. L. Heng, T. G. Finstad, Y. J. Li, A. E. Gunnæs, A. Olsen, P. Storås
    Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:531-535 [Journal]
  99. T. V. Torchynska, A. Díaz Cano, S. Jiménez Sandoval, M. Dybiec, S. Ostapenko, M. Mynbaeva
    Photoluminescence and Raman spectroscopy in porous SiC. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:536-538 [Journal]
  100. O. Millo, I. Asulin, A. Sharoni, O. Yuli, G. Koren
    The superconductor proximity effect in Au-YBa2Cu3O7-delta bilayer films: the role of order parameter anisotropy. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:539-542 [Journal]
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