Journals in DBLP

Microelectronics Journal
2004, volume: 35, number: 3

1. Vitezslav Benda, E. M. Sankara Narayanan
   Advances in power semiconductor devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:223- [Journal]
   
2. Dan Kinzer
   Advanced power semiconductors and ICs for DC/DC converter applications. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:225-233 [Journal]
   
3. E. M. Sankara Narayanan, O. Spulber, M. Sweet, J. V. S. C. Bose, K. Verchinine, N. Luther-King, N. Moguilnaia, M. M. De Souza
   Progress in MOS-controlled bipolar devices and edge termination technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:235-248 [Journal]
   
4. P. Hazdra, J. Vobecký, H. Dorschner, K. Brand
   Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:249-257 [Journal]
   
5. Ralf Siemieniec, Josef Lutz
   Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:259-267 [Journal]
   
6. M. Vellvehí, D. Flores, X. Jordà, S. Hidalgo, J. Rebollo, L. Coulbeck, P. Waind
   Design considerations for 6.5 kV IGBT devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:269-275 [Journal]
   
7. A. Bourennane, M. Breil, J. L. Sanchez, P. Austin, J. Jalade
   A new triggering mode in a vertical bi-directional MOS-thyristor device. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:277-285 [Journal]
   
8. Ji-Hoon Hong, Sang-Koo Chung, Yearn-Ik Choi
   Optimum design for minimum on-resistance of low voltage trench power MOSFET. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:287-289 [Journal]
   
9. J. Roig, D. Flores, S. Hidalgo, J. Rebollo, J. Millán
   Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:291-297 [Journal]
   
10. J. M. Park, R. Klima, Siegfried Selberherr
    High-voltage lateral trench gate SOI-LDMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:3, pp:299-304 [Journal]
    
11. S. Hardikar, M. M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan
    A novel double RESURF LDMOS for HVIC's. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:3, pp:305-310 [Journal]
    
12. K. S. Karim, P. Servati, Arokia Nathan
    High voltage amorphous silicon TFT for use in large area applications. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:3, pp:311-315 [Journal]