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Paper info

B. Prasad, P. J. George, Chandra Shekhar
High Frequency Behaviour Of Electron Transport In Silicon And Its Implication For Drain Conductance Of Mos Transistors. [Citation Graph (0, 0)][DBLP]
VLSI Design, 2001, pp:491-494 [Conf]

Scores and Rank
SCEAS: 0.41721
SCEAS_PS: 0
SCEAS_BPS: 0
SCEAS_EPS: 0
SCEAS_BEPS: 0
SCEAS_B0: 3.11202
PAGE_RANK: 0.48050
HITS_H: 0
HITS_A: 0
BHITS_H: 0
BHITS_A: 0
SALSA_A: 0
SALSA_H: 0
BSALSA_A: 0
BSALSA_H: 0
P: 0
BCC: 0
citations_to_me: 0
citations_from_me: 0



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NOTICE1
System may not be available sometimes or not working properly, since it is still in development with continuous upgrades
NOTICE2
The rankings that are presented on this page should NOT be considered as formal since the citation info is incomplete in DBLP
 
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