The SCEAS System | ||||
Paper infoW. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. ShengEvidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2007, v:47, n:2-3, pp:429-433 [Journal] Scores and Rank SCEAS: 0.41721 SCEAS_PS: 0 SCEAS_BPS: 0 SCEAS_EPS: 0 SCEAS_BEPS: 0 SCEAS_B0: 3.11202 PAGE_RANK: 0.48050 HITS_H: 0 HITS_A: 0 BHITS_H: 0 BHITS_A: 0 SALSA_A: 0 SALSA_H: 0 BSALSA_A: 0 BSALSA_H: 0 P: 0 BCC: 0 citations_to_me: 0 citations_from_me: 0 Graph produced by graphviz-1.8.5 | ||||
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