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Yangyuan Wang: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. [Citation Graph (0, 0)][DBLP]
ISQED, 2006, pp:115-120 [Conf] - Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. [Citation Graph (0, 0)][DBLP]
ISQED, 2006, pp:127-132 [Conf] - Teng Lin, Jianhua Feng, Yangyuan Wang
A New Test Data Compression Scheme for Multi-scan Designs. [Citation Graph (0, 0)][DBLP]
ISVLSI, 2007, pp:179-185 [Conf] - Jin He, Xing Zhang, Ru Huang, Yangyuan Wang
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:12, pp:1953-1957 [Journal] - Jin He, Xing Zhang, Ru Huang, Yangyuan Wang
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:1, pp:145-148 [Journal] - Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:5, pp:707-711 [Journal]
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