Work-function engineering for reduced power and higher integration density: An alternative to sizing for stability in FinFET memory circuits. [Citation Graph (, )][DBLP]
Low power and robust 7T dual-Vt SRAM circuit. [Citation Graph (, )][DBLP]
Dynamic wordline voltage swing for low leakage and stable static memory banks. [Citation Graph (, )][DBLP]
Dual signal frequencies and voltage levels for low power and temperature-gradient tolerant clock distribution. [Citation Graph (, )][DBLP]
Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations. [Citation Graph (, )][DBLP]
Characterization of New Static Independent-Gate-Biased FinFET Latches and Flip-Flops under Process Variations. [Citation Graph (, )][DBLP]
Compact FinFET Memory Circuits with P-Type Data Access Transistors for Low Leakage and Robust Operation. [Citation Graph (, )][DBLP]
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