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Steven H. Voldman: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. Yoon Huh, Peter Bendix, Kyungjin Min, Jau-Wen Chen, Ravindra Narayan, Larry D. Johnson, Steven H. Voldman
    ESD-Induced Internal Core Device Failure: New Failure Modes in System-on-Chip (SoC) Designs, invited. [Citation Graph (0, 0)][DBLP]
    IWSOC, 2005, pp:47-53 [Conf]
  2. James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Gregory Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson
    Foundation of rf CMOS and SiGe BiCMOS technologies. [Citation Graph (0, 0)][DBLP]
    IBM Journal of Research and Development, 2003, v:47, n:2-3, pp:101-138 [Journal]
  3. Sherry Suat Cheng Khoo, Pee Ya Tan, Steven H. Voldman
    Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:7, pp:1039-1045 [Journal]
  4. Steven H. Voldman
    A review of electrostatic discharge (ESD) in advanced semiconductor technology. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2004, v:44, n:1, pp:33-46 [Journal]
  5. Steven H. Voldman
    A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:3-4, pp:437-455 [Journal]
  6. Steven H. Voldman
    A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:2, pp:323-340 [Journal]

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