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D. Roy :
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T. Devoivre , M. Lunenborg , C. Julien , J.-P. Carrere , P. Ferreira , W. J. Toren , A. VandeGoor , P. Gayet , T. Berger , O. Hinsinger , P. Vannier , Y. Trouiller , Y. Rody , P.-J. Goirand , R. Palla , I. Thomas , F. Guyader , D. Roy , B. Borot , N. Planes , S. Naudet , F. Pico , D. Duca , F. Lalanne , D. Heslinga , M. Haond Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC). [Citation Graph (0, 0)][DBLP ] MTDT, 2002, pp:157-162 [Conf ] S. Bruyère , D. Roy , E. Robilliart , E. Vincent , G. Ghibaudo Body effect induced wear-out acceleration in ultra-thin oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1031-1034 [Journal ] F. Monsieur , E. Vincent , D. Roy , S. Bruyère , G. Pananakakis , G. Ghibaudo Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal ] S. Bruyère , F. Monsieur , D. Roy , E. Vincent , G. Ghibaudo Failures in ultrathin oxides: Stored energy or carrier energy driven? [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1367-1372 [Journal ] F. Monsieur , E. Vincent , D. Roy , S. Bruyère , G. Pananakakis , G. Ghibaudo Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal ] D. Roy , S. Bruyère , E. Vincent , F. Monsieur Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:9-11, pp:1497-1500 [Journal ] G. Ribes , S. Bruyère , F. Monsieur , D. Roy , V. Huard New insights into the change of voltage acceleration and temperature activation of oxide breakdown. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:8, pp:1211-1214 [Journal ] F. Monsieur , E. Vincent , V. Huard , S. Bruyère , D. Roy , T. Skotnicki , G. Pananakakis , G. Ghibaudo On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal ] G. Ribes , S. Bruyère , M. Denais , F. Monsieur , V. Huard , D. Roy , G. Ghibaudo Multi-vibrational hydrogen release: Physical origin of Tbd , Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal ] G. Ribes , S. Bruyère , M. Denais , D. Roy , G. Ghibaudo Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal ] C. R. Parthasarathy , M. Denais , V. Huard , G. Ribes , D. Roy , C. Guérin , F. Perrier , E. Vincent , A. Bravaix Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal ] D. Roy Discrete Rayleigh distribution. [Citation Graph (0, 0)][DBLP ] IEEE Transactions on Reliability, 2004, v:53, n:2, pp:255-260 [Journal ] Search in 0.001secs, Finished in 0.001secs