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M. K. Radhakrishnan :
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Natarajan Mahadeva Iyer , M. K. Radhakrishnan ESD Reliability Challenges for RF/Mixed Signal Design & Processing. [Citation Graph (0, 0)][DBLP ] VLSI Design, 2003, pp:20-21 [Conf ] M. K. Radhakrishnan Device Reliability and Failure Mechanisms Related to Gate Dielectrics and Interconnects. [Citation Graph (0, 0)][DBLP ] VLSI Design, 2004, pp:805-808 [Conf ] M. K. Radhakrishnan , K. L. Pey , C. H. Tung , W. H. Lin Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:4-5, pp:565-571 [Journal ] K. L. Pey , C. H. Tung , M. K. Radhakrishnan , L. J. Tang , Y. Sun , X. D. Wang , W. H. Lin Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:9-11, pp:1471-1476 [Journal ] Search in 0.002secs, Finished in 0.002secs