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I. Eisele: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. G. Shrivastav, S. Mahapatra, V. Ramgopal Rao, J. Vasi, K. G. Anil, C. Fink, Walter Hansch, I. Eisele
    erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering. [Citation Graph (0, 0)][DBLP]
    VLSI Design, 2001, pp:475-478 [Conf]
  2. A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, Walter Hansch, H. Baumgärtner, I. Eisele
    Nitrogen implantations for rapid thermal oxinitride layers. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:977-980 [Journal]
  3. V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele
    Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:937-940 [Journal]

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