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Siegfried Selberherr: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. M. Radi, Siegfried Selberherr
    AMIGOS A Rapid Prototyping System. [Citation Graph (0, 0)][DBLP]
    Applied Informatics, 1999, pp:372-374 [Conf]
  2. Thomas Binder, Siegfried Selberherr
    Object-oriented wafer-state services. [Citation Graph (0, 0)][DBLP]
    ESM, 2000, pp:360-364 [Conf]
  3. Clemens Heitzinger, Siegfried Selberherr
    On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method. [Citation Graph (0, 0)][DBLP]
    ESM, 2002, pp:653-660 [Conf]
  4. Karl P. Traar, Martin Stiftinger, Otto Heinreichsberger, Siegfried Selberherr
    Three-dimensional simulation of semiconductor devices on supercomputers. [Citation Graph (0, 0)][DBLP]
    ICS, 1991, pp:154-162 [Conf]
  5. Peter Fleischmann, Robert Kosik, Siegfried Selberherr
    Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements. [Citation Graph (0, 0)][DBLP]
    IMR, 1999, pp:241-246 [Conf]
  6. Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr
    Monte Carlo Analysis of the Small-Signal Response of Charge Carriers. [Citation Graph (0, 0)][DBLP]
    LSSC, 2001, pp:175-182 [Conf]
  7. Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr
    A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation. [Citation Graph (0, 0)][DBLP]
    LSSC, 2003, pp:170-177 [Conf]
  8. Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr
    A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations. [Citation Graph (0, 0)][DBLP]
    LSSC, 2003, pp:178-184 [Conf]
  9. Sergey Smirnov, Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr
    A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle. [Citation Graph (0, 0)][DBLP]
    LSSC, 2003, pp:185-193 [Conf]
  10. Viktor Sverdlov, Hans Kosina, Christian A. Ringhofer, Mihail Nedjalkov, Siegfried Selberherr
    Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. [Citation Graph (0, 0)][DBLP]
    LSSC, 2005, pp:594-601 [Conf]
  11. Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger
    Three-Dimensional MOS Device Simulation on a Connection Machine. [Citation Graph (0, 0)][DBLP]
    PPSC, 1991, pp:388-393 [Conf]
  12. Karl P. Traar, Wolfgang R. Mader, Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger
    High performance preconditioning on supercomputers for the 3D device simulator MINIMOS. [Citation Graph (0, 0)][DBLP]
    SC, 1990, pp:224-231 [Conf]
  13. Johannes Demel, Siegfried Selberherr
    JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen. [Citation Graph (0, 0)][DBLP]
    Simulationstechnik, 1984, pp:149-153 [Conf]
  14. Siegfried Selberherr, Hans W. Pötzl
    Numerische Simulation von Halbleiterbauelementen. [Citation Graph (0, 0)][DBLP]
    Simulationstechnik, 1984, pp:154-158 [Conf]
  15. Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr
    An advanced equation assembly module. [Citation Graph (0, 0)][DBLP]
    Eng. Comput. (Lond.), 2005, v:21, n:2, pp:151-163 [Journal]
  16. Thomas Binder, Andreas Hössinger, Siegfried Selberherr
    Rigorous integration of semiconductor process and device simulators. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2003, v:22, n:9, pp:1204-1214 [Journal]
  17. Thomas Binder, Clemens Heitzinger, Siegfried Selberherr
    A study on global and local optimization techniques for TCAD analysis tasks. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2004, v:23, n:6, pp:814-822 [Journal]
  18. Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr
    Monte Carlo simulation of silicon amorphization during ion implantation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1998, v:17, n:12, pp:1236-1243 [Journal]
  19. J. Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr
    Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2006, v:25, n:10, pp:2118-2128 [Journal]
  20. Franz Fasching, Walter Tuppa, Siegfried Selberherr
    VISTA-the data level. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1994, v:13, n:1, pp:72-81 [Journal]
  21. Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    On smoothing three-dimensional Monte Carlo ion implantation simulation results. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2003, v:22, n:7, pp:879-883 [Journal]
  22. Clemens Heitzinger, Wolfgang Pyka, Naoki Tamaoki, Toshiro Takase, Toshimitsu Ohmine, Siegfried Selberherr
    Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2003, v:22, n:3, pp:285-292 [Journal]
  23. Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr
    A method for generating structurally aligned grids for semiconductor device simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2005, v:24, n:10, pp:1485-1491 [Journal]
  24. Stefan Halama, Christoph Pichler, Gerhard Rieger, Gerhard Schrom, Thomas Simlinger, Siegfried Selberherr
    VISTA-user interface, task level, and tool integration. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1995, v:14, n:10, pp:1208-1222 [Journal]
  25. Gerhard Hobler, Siegfried Selberherr
    Two-dimensional modeling of ion implantation induced point defects. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1988, v:7, n:2, pp:174-180 [Journal]
  26. Gerhard Hobler, Siegfried Selberherr
    Monte Carlo simulation of ion implantation into two- and three-dimensional structures. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1989, v:8, n:5, pp:450-459 [Journal]
  27. Andreas Hössinger, Erasmus Langer, Siegfried Selberherr
    Parallelization of a Monte Carlo ion implantation simulator. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2000, v:19, n:5, pp:560-567 [Journal]
  28. Heinrich Kirchauer, Siegfried Selberherr
    Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1997, v:16, n:12, pp:1431-1438 [Journal]
  29. Robert Kosik, Peter Fleischmann, Bernhard Haindl, Paola Pietra, Siegfried Selberherr
    On the interplay between meshing and discretization inthree-dimensional diffusion simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2000, v:19, n:11, pp:1233-1240 [Journal]
  30. Hans Kosina, Siegfried Selberherr
    A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1994, v:13, n:2, pp:201-210 [Journal]
  31. Ernst Leitner, Siegfried Selberherr
    Mixed-element decomposition method for three-dimensional grid adaptation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1998, v:17, n:7, pp:561-572 [Journal]
  32. Rui Martins, Wolfgang Pyka, Rainer Sabelka, Siegfried Selberherr
    High-precision interconnect analysis. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1998, v:17, n:11, pp:1148-1159 [Journal]
  33. Gerd Nanz, Peter Dickinger, Siegfried Selberherr
    Calculation of contact currents in device simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1992, v:11, n:1, pp:128-136 [Journal]
  34. Peter Pichler, Werner Jüngling, Siegfried Selberherr, Edgar Guerrero, Hans W. Pötzl
    Simulation of Critical IC-Fabrication Steps. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1985, v:4, n:4, pp:384-397 [Journal]
  35. Richard Plasun, Michael Stockinger, Siegfried Selberherr
    Integrated optimization capabilities in the VISTA technology CAD framework. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1998, v:17, n:12, pp:1244-1251 [Journal]
  36. Wolfgang Pyka, Peter Fleischmann, Bernhard Haindl, Siegfried Selberherr
    Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1999, v:18, n:12, pp:1741-1749 [Journal]
  37. A. Schütz, Siegfried Selberherr, Hans W. Pötzl
    Analysis of Breakdown Phenomena in MOSFET's. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1982, v:1, n:2, pp:77-85 [Journal]
  38. Siegfried Selberherr, Christian A. Ringhofer
    Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1984, v:3, n:1, pp:52-64 [Journal]
  39. Ernst Strasser, Siegfried Selberherr
    Algorithms and models for cellular based topography simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1995, v:14, n:9, pp:1104-1114 [Journal]
  40. Martin Thurner, Philipp Lindorfer, Siegfried Selberherr
    Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1990, v:9, n:11, pp:1189-1197 [Journal]
  41. Martin Thurner, Siegfried Selberherr
    Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1990, v:9, n:8, pp:856-867 [Journal]
  42. Christoph Wasshuber, Hans Kosina, Siegfried Selberherr
    SIMON-A simulator for single-electron tunnel devices and circuits. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1997, v:16, n:9, pp:937-944 [Journal]
  43. W. Wessner, J. Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2006, v:25, n:10, pp:2129-2139 [Journal]
  44. Johannes Demel, Siegfried Selberherr
    VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in FORTRAN. [Citation Graph (0, 0)][DBLP]
    Angewandte Informatik, 1984, v:26, n:6, pp:244-247 [Journal]
  45. Hajdin Ceric, Siegfried Selberherr
    Simulative prediction of the resistance change due to electromigration induced void evolution. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:9-11, pp:1457-1460 [Journal]
  46. Andreas Gehring, F. Jiménez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr
    Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1495-1500 [Journal]
  47. T. Ayalew, Andreas Gehring, J. M. Park, Tibor Grasser, Siegfried Selberherr
    Improving SiC lateral DMOSFET reliability under high field stress. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1889-1894 [Journal]
  48. Vassil Palankovski, Siegfried Selberherr
    Rigorous modeling of high-speed semiconductor devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2004, v:44, n:6, pp:889-897 [Journal]
  49. Viktor Sverdlov, Hans Kosina, Siegfried Selberherr
    Modeling current transport in ultra-scaled field-effect transistors. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2007, v:47, n:1, pp:11-19 [Journal]
  50. J. M. Park, R. Klima, Siegfried Selberherr
    High-voltage lateral trench gate SOI-LDMOSFETs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:3, pp:299-304 [Journal]
  51. Clemens Heitzinger, Siegfried Selberherr
    On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:2, pp:167-171 [Journal]
  52. Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr
    Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:10, pp:805-810 [Journal]
  53. Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr
    An event bias technique for Monte Carlo device simulation. [Citation Graph (0, 0)][DBLP]
    Mathematics and Computers in Simulation, 2003, v:62, n:3-6, pp:367-375 [Journal]
  54. Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr
    Monte Carlo algorithms for stationary device simulations. [Citation Graph (0, 0)][DBLP]
    Mathematics and Computers in Simulation, 2003, v:62, n:3-6, pp:453-461 [Journal]
  55. Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results. [Citation Graph (0, 0)][DBLP]
    Mathematics and Computers in Simulation, 2004, v:66, n:2-3, pp:219-230 [Journal]
  56. Michael Spevak, René Heinzl, Philipp Schwaha, Siegfried Selberherr
    A Computational Framework for Topological Operations. [Citation Graph (0, 0)][DBLP]
    PARA, 2006, pp:781-790 [Conf]
  57. René Heinzl, Michael Spevak, Philipp Schwaha, Siegfried Selberherr
    A High Performance Generic Scientific Simulation Environment. [Citation Graph (0, 0)][DBLP]
    PARA, 2006, pp:996-1005 [Conf]
  58. Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr
    Stochastic interpretation of the Wigner transport in nanostructures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:5-8, pp:443-445 [Journal]
  59. Christian Harlander, Rainer Sabelka, Siegfried Selberherr
    Efficient inductance calculation in interconnect structures by applying the Monte Carlo method. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:9, pp:815-821 [Journal]

  60. Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design. [Citation Graph (, )][DBLP]


  61. Simulation Methodologies for Scientific Computing - Modern Application Design. [Citation Graph (, )][DBLP]


  62. Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. [Citation Graph (, )][DBLP]


  63. Particle Model of the Scattering-Induced Wigner Function Correction. [Citation Graph (, )][DBLP]


  64. Three-dimensional on-chip inductance and resistance extraction. [Citation Graph (, )][DBLP]


  65. Study of the Properties of Biotin-streptavidin Sensitive BioFETs. [Citation Graph (, )][DBLP]


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