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Thomas W. Sigmon: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. Robert Anholt, Thomas W. Sigmon
    A process and device model for GaAs MESFET technology: GATES. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1989, v:8, n:4, pp:350-359 [Journal]
  2. Michael D. Deal, S. E. Hansen, Thomas W. Sigmon
    SUPREM 3.5-process modeling of GaAs integrated circuit technology. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1989, v:8, n:9, pp:939-951 [Journal]
  3. Ettore Landi, Paul G. Carey, Thomas W. Sigmon
    Numerical simulation of the gas immersion laser doping (GILD) process in silicon. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1988, v:7, n:2, pp:205-214 [Journal]

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