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A. F. Tasch Jr.: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.
    Universal MOSFET hole mobility degradation models for circuit simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1993, v:12, n:3, pp:439-445 [Journal]
  2. C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.
    Improved universal MOSFET electron mobility degradation models for circuit simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1993, v:12, n:10, pp:1542-1546 [Journal]
  3. Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee
    A universal MOSFET mobility degradation model for circuit simulation. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 1990, v:9, n:10, pp:1123-1126 [Journal]

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