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Andreas Hössinger: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. Thomas Binder, Andreas Hössinger, Siegfried Selberherr
    Rigorous integration of semiconductor process and device simulators. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2003, v:22, n:9, pp:1204-1214 [Journal]
  2. Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    On smoothing three-dimensional Monte Carlo ion implantation simulation results. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2003, v:22, n:7, pp:879-883 [Journal]
  3. Andreas Hössinger, Erasmus Langer, Siegfried Selberherr
    Parallelization of a Monte Carlo ion implantation simulator. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2000, v:19, n:5, pp:560-567 [Journal]
  4. W. Wessner, J. Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. [Citation Graph (0, 0)][DBLP]
    IEEE Trans. on CAD of Integrated Circuits and Systems, 2006, v:25, n:10, pp:2129-2139 [Journal]
  5. Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr
    An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results. [Citation Graph (0, 0)][DBLP]
    Mathematics and Computers in Simulation, 2004, v:66, n:2-3, pp:219-230 [Journal]

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