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S. Bruyère: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo
Body effect induced wear-out acceleration in ultra-thin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1031-1034 [Journal] - F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal] - S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1367-1372 [Journal] - F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal] - D. Roy, S. Bruyère, E. Vincent, F. Monsieur
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1497-1500 [Journal] - G. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1211-1214 [Journal] - F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, T. Skotnicki, G. Pananakakis, G. Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal] - C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent
MIM capacitance variation under electrical stress. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1237-1240 [Journal] - G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal] - G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal] - E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:5-6, pp:925-928 [Journal]
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