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G. Ghibaudo: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo
Body effect induced wear-out acceleration in ultra-thin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1031-1034 [Journal] - F. Lime, G. Ghibaudo, G. Guégan
Stress induced leakage current at low field in ultra thin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1421-1425 [Journal] - F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal] - M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1361-1366 [Journal] - R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1027-1030 [Journal] - F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1035-1039 [Journal] - S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo
Failures in ultrathin oxides: Stored energy or carrier energy driven? [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1367-1372 [Journal] - S. Haendler, J. Jomaah, G. Ghibaudo, F. Balestra
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:6, pp:855-860 [Journal] - P. O'Sullivan, R. Clerc, Kevin G. McCarthy, Alan Mathewson, G. Ghibaudo
Direct tunnelling models for circuit simulation. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:951-957 [Journal] - F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal] - B. Cretu, F. Balestra, G. Ghibaudo, G. Guégan
Origin of hot carrier degradation in advanced nMOSFET devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1405-1408 [Journal] - M. Fadlallah, G. Ghibaudo, J. Jomaah, M. Zoaeter, G. Guégan
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:1, pp:41-46 [Journal] - G. Ghibaudo, T. Boutchacha
Electrical noise and RTS fluctuations in advanced CMOS devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:4-5, pp:573-582 [Journal] - F. Lime, G. Ghibaudo, B. Guillaumot
Charge trapping in SiO2/HfO2/TiN gate stack. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1445-1448 [Journal] - F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, T. Skotnicki, G. Pananakakis, G. Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal] - M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1433-1438 [Journal] - G. Ghibaudo, E. Vincent
Guest Editorial. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1173- [Journal] - G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal] - G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal] - D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo
On the SILC mechanism in MOSFET's with ultrathin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:5-6, pp:849-852 [Journal] - E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:5-6, pp:925-928 [Journal]
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