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Hei Wong: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- Hei Wong, P. G. Han, M. C. Poon, Y. Gao
Investigation of the surface silica layer on porous poly-Si thin films. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:2, pp:179-184 [Journal] - M. C. Poon, Y. Gao, T. C. W. Kok, A. M. Myasnikov, Hei Wong
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:12, pp:2071-2074 [Journal] - P. G. Han, Hei Wong, Andy H. P. Chan, M. C. Poon
A novel approach for fabricating light-emitting porous polysilicon films. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:6, pp:929-933 [Journal] - Hei Wong
Recent developments in silicon optoelectronic devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:3, pp:317-326 [Journal] - Hei Wong, V. A. Gritsenko
Defects in silicon oxynitride gate dielectric films. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:4-5, pp:597-605 [Journal] - K. L. Ng, Nian Zhan, C. W. Kok, M. C. Poon, Hei Wong
Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1289-1293 [Journal] - Hei Wong
Low-frequency noise study in electron devices: review and update. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:585-599 [Journal] - Jackie Chan, Hei Wong, M. C. Poon, C. W. Kok
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:611-616 [Journal] - V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger
Onefold coordinated oxygen atom: an electron trap in the silicon oxide. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:665-669 [Journal] - V. Filip, Hei Wong, D. Nicolaescu
Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:7, pp:1027-1034 [Journal] - Hei Wong, V. Filip, C. K. Wong, P. S. Chung
Silicon integrated photonics begins to revolutionize. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2007, v:47, n:1, pp:1-10 [Journal] - Sergey Shaimeev, Vladimir Gritsenko, Kaupo Kukli, Hei Wong, Eun-Hong Lee, Chungwoo Kim
Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2007, v:47, n:1, pp:36-40 [Journal] - Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, C. W. Kok
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. [Citation Graph (0, 0)][DBLP]
Microelectronics Journal, 2005, v:36, n:1, pp:29-33 [Journal]
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