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F. Monsieur :
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F. Monsieur , E. Vincent , D. Roy , S. Bruyère , G. Pananakakis , G. Ghibaudo Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal ] M. Fadlallah , A. Szewczyk , C. Giannakopoulos , B. Cretu , F. Monsieur , T. Devoivre , J. Jomaah , G. Ghibaudo Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2 O5 as gate dielectrics. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1361-1366 [Journal ] F. Monsieur , E. Vincent , G. Pananakakis , G. Ghibaudo Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1035-1039 [Journal ] S. Bruyère , F. Monsieur , D. Roy , E. Vincent , G. Ghibaudo Failures in ultrathin oxides: Stored energy or carrier energy driven? [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1367-1372 [Journal ] F. Monsieur , E. Vincent , D. Roy , S. Bruyère , G. Pananakakis , G. Ghibaudo Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal ] D. Roy , S. Bruyère , E. Vincent , F. Monsieur Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:9-11, pp:1497-1500 [Journal ] G. Ribes , S. Bruyère , F. Monsieur , D. Roy , V. Huard New insights into the change of voltage acceleration and temperature activation of oxide breakdown. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:8, pp:1211-1214 [Journal ] F. Monsieur , E. Vincent , V. Huard , S. Bruyère , D. Roy , T. Skotnicki , G. Pananakakis , G. Ghibaudo On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal ] G. Ribes , S. Bruyère , M. Denais , F. Monsieur , V. Huard , D. Roy , G. Ghibaudo Multi-vibrational hydrogen release: Physical origin of Tbd , Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal ] Search in 0.001secs, Finished in 0.002secs