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M. M. De Souza: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- M. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:2, pp:169-177 [Journal] - S. K. Manhas, D. Chandra Sekhar, A. S. Oates, M. M. De Souza
Characterisation of series resistance degradation through charge pumping technique. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:617-624 [Journal] - M. M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala
Influence of mobility model on extraction of stress dependent source-drain series resistance. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2004, v:44, n:1, pp:25-32 [Journal] - S. Hardikar, M. M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan
A novel double RESURF LDMOS for HVIC's. [Citation Graph (0, 0)][DBLP]
Microelectronics Journal, 2004, v:35, n:3, pp:305-310 [Journal] - E. M. Sankara Narayanan, O. Spulber, M. Sweet, J. V. S. C. Bose, K. Verchinine, N. Luther-King, N. Moguilnaia, M. M. De Souza
Progress in MOS-controlled bipolar devices and edge termination technologies. [Citation Graph (0, 0)][DBLP]
Microelectronics Journal, 2004, v:35, n:3, pp:235-248 [Journal]
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