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F. Saigné :
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D. Zander , C. Petit , F. Saigné , A. Meinertzhagen High field stress at and above room temperature in 2.3 nm thick oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1023-1026 [Journal ] D. Zander , F. Saigné , A. Meinertzhagen Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:9-10, pp:1355-1360 [Journal ] F. Saigné , Olivier Quittard , Laurent Dusseau , F. Joffre , C. Oudéa , J. Fesquet , Jean Gasiot Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2002, v:42, n:3, pp:459-461 [Journal ] D. Zander , F. Saigné , A. Meinertzhagen , C. Petit Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:9-11, pp:1489-1493 [Journal ] Search in 0.001secs, Finished in 0.001secs