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Lingfeng Mao: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan
Effect of SiO2/Si interface roughness on gate current. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:11, pp:1903-1907 [Journal] - Lingfeng Mao, Changhua Tan, Mingzhen Xu
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:6, pp:927-931 [Journal] - Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu
The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:2, pp:175-181 [Journal] - Lingfeng Mao, Changhua Tan, Mingzhen Xu
Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931]. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:6, pp:991- [Journal]
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