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A. Touboul: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. D. Lewis, V. Pouget, T. Beauchêne, H. Lapuyade, P. Fouillat, A. Touboul, Felix Beaudoin, Philippe Perdu
    Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:9-10, pp:1471-1476 [Journal]
  2. B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut
    Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:9-10, pp:1573-1578 [Journal]
  3. N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust
    Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:9-11, pp:1575-1580 [Journal]
  4. A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren
    Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1713-1718 [Journal]
  5. J. C. Martin, C. Maneux, N. Labat, A. Touboul, M. Riet, S. Blayac, M. Kahn, J. Godin
    1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1725-1730 [Journal]
  6. M. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove
    High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1731-1736 [Journal]
  7. N. Guitard, F. Essely, D. Trémouilles, M. Bafleur, N. Nolhier, Philippe Perdu, A. Touboul, V. Pouget, D. Lewis
    Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:9-11, pp:1415-1420 [Journal]
  8. N. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez
    Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:9-11, pp:1611-1616 [Journal]
  9. A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul
    AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1725-1730 [Journal]
  10. F. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis
    Application of various optical techniques for ESD defect localization. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1563-1568 [Journal]

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