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M. Porti :
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M. Porti , X. Blasco , M. Nafría , X. Aymerich , Alexander Olbrich , Bernd Ebersberger Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1041-1044 [Journal ] R. Rodríguez , M. Porti , M. Nafría , X. Aymerich Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1011-1013 [Journal ] D. Hill , X. Blasco , M. Porti , M. Nafría , X. Aymerich Characterising the surface roughness of AFM grown SiO2 on Si. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2001, v:41, n:7, pp:1077-1079 [Journal ] M. Porti , M. Nafría , X. Aymerich Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:9-11, pp:1501-1505 [Journal ] M. Porti , S. Meli , M. Nafría , X. Aymerich Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2003, v:43, n:8, pp:1203-1209 [Journal ] L. Aguilera , M. Porti , M. Nafría , X. Aymerich Pre- and post-BD electrical conduction of stressed HfO2 /SiO2 MOS gate stacks observed at the nanoscale. [Citation Graph (0, 0)][DBLP ] Microelectronics Reliability, 2005, v:45, n:9-11, pp:1390-1393 [Journal ] Search in 0.001secs, Finished in 0.001secs