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X. Aymerich: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. M. Porti, X. Blasco, M. Nafría, X. Aymerich, Alexander Olbrich, Bernd Ebersberger
    Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1041-1044 [Journal]
  2. R. Rodríguez, M. Porti, M. Nafría, X. Aymerich
    Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1011-1013 [Journal]
  3. D. Hill, X. Blasco, M. Porti, M. Nafría, X. Aymerich
    Characterising the surface roughness of AFM grown SiO2 on Si. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1077-1079 [Journal]
  4. X. Blasco, M. Nafría, X. Aymerich
    Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:9-11, pp:1513-1516 [Journal]
  5. M. Porti, M. Nafría, X. Aymerich
    Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1501-1505 [Journal]
  6. M. Porti, S. Meli, M. Nafría, X. Aymerich
    Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:8, pp:1203-1209 [Journal]
  7. R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich
    Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:861-864 [Journal]
  8. L. Aguilera, M. Porti, M. Nafría, X. Aymerich
    Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:9-11, pp:1390-1393 [Journal]
  9. X. Blasco, M. Nafría, X. Aymerich, J. Pétry, W. Vandervorst
    Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:811-814 [Journal]
  10. R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken
    FinFET and MOSFET preliminary comparison of gate oxide reliability. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:9-11, pp:1608-1611 [Journal]

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