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Ph. Godignon: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. M. Badila, Ph. Godignon, J. Millán, S. Berberich, G. Brezeanu
    The electron irradiation effects on silicon gate dioxide used for power MOS devices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2001, v:41, n:7, pp:1015-1018 [Journal]
  2. A. Pérez-Tomás, X. Jordà, Ph. Godignon, J. L. Gálvez, M. Vellvehí, J. Millán
    IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:8, pp:659-666 [Journal]
  3. X. Perpiñà, X. Jordà, N. Mestres, M. Vellvehí, Ph. Godignon, J. Millán
    Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2004, v:35, n:10, pp:841-847 [Journal]

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