SCEAS

The SCEAS System

Title:
Author:

N. Malbert: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1573-1578 [Journal]
N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1575-1580 [Journal]
A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1713-1718 [Journal]
N. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:9-11, pp:1611-1616 [Journal]
A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:9-11, pp:1725-1730 [Journal]

Search in 0.001secs, Finished in 0.001secs

NOTICE1
System may not be available sometimes or not working properly, since it is still in development with continuous upgrades

NOTICE2
The rankings that are presented on this page should NOT be considered as formal since the citation info is incomplete in DBLP