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Publications of Author

1. S. Chakraborty, P. T. Lai, Paul C. K. Kwok
   MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2002, v:42, n:3, pp:455-458 [Journal]
   
2. B. L. Yang, N. W. Cheung, S. Denholm, J. Shao, H. Wong, P. T. Lai, Y. C. Cheng
   Ultra-shallow n⁺p junction formed by PH₃ and AsH₃ plasma immersion ion implantation. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2002, v:42, n:12, pp:1985-1989 [Journal]
   
3. David C. T. Or, P. T. Lai, J. K. O. Sin, Paul C. K. Kwok, J. P. Xu
   Enhanced reliability for low-temperature gate dielectric of MOS devices by N₂O or NO plasma nitridation. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2003, v:43, n:1, pp:163-166 [Journal]
   
4. P. T. Lai, J. P. Xu, H. P. Wu, C. L. Chan
   Interfacial properties and reliability of SiO₂ grown on 6H-SiC in dry O₂ plus trichloroethylene. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2004, v:44, n:4, pp:577-580 [Journal]
   
5. B. L. Yang, P. T. Lai, H. Wong
   Conduction mechanisms in MOS gate dielectric films. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2004, v:44, n:5, pp:709-718 [Journal]
   
6. B. L. Yang, Paul C. K. Kwok, P. T. Lai
   Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2006, v:46, n:12, pp:2044-2048 [Journal]
   
7. X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen
   A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2007, v:47, n:2-3, pp:391-394 [Journal]
   
8. 
   Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor. [Citation Graph (, )][DBLP]