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C. H. Tung: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. M. K. Radhakrishnan, K. L. Pey, C. H. Tung, W. H. Lin
    Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:4-5, pp:565-571 [Journal]
  2. K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin
    Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2003, v:43, n:9-11, pp:1471-1476 [Journal]
  3. F. Palumbo, G. Condorelli, S. Lombardo, K. L. Pey, C. H. Tung, L. J. Tang
    Structure of the oxide damage under progressive breakdown. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2005, v:45, n:5-6, pp:845-848 [Journal]
  4. W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng
    Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2007, v:47, n:2-3, pp:429-433 [Journal]

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