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J. M. Rafí:
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Publications of Author
- J. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán
Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2002, v:42, n:9-11, pp:1501-1504 [Journal]
- K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2005, v:45, n:9-11, pp:1376-1381 [Journal]
- J. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1657-1663 [Journal]
- K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1731-1735 [Journal]
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