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B. L. Yang: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. B. L. Yang, N. W. Cheung, S. Denholm, J. Shao, H. Wong, P. T. Lai, Y. C. Cheng
    Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2002, v:42, n:12, pp:1985-1989 [Journal]
  2. B. L. Yang, P. T. Lai, H. Wong
    Conduction mechanisms in MOS gate dielectric films. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2004, v:44, n:5, pp:709-718 [Journal]
  3. B. L. Yang, Paul C. K. Kwok, P. T. Lai
    Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. [Citation Graph (0, 0)][DBLP]
    Microelectronics Reliability, 2006, v:46, n:12, pp:2044-2048 [Journal]

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