|
Search the dblp DataBase
G. Ribes:
[Publications]
[Author Rank by year]
[Co-authors]
[Prefers]
[Cites]
[Cited by]
Publications of Author
- G. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2003, v:43, n:8, pp:1211-1214 [Journal]
- G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal]
- G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal]
- C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix
Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal]
Search in 0.001secs, Finished in 0.001secs
|