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J. Vobecký: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- J. Vobecký, P. Hazdra
Advanced Local Lifetime Control for Higher Reliability of Power Devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1883-1888 [Journal] - J. Vobecký, P. Hazdra, V. Záhlava
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:537-544 [Journal] - J. Vobecký, D. Kolesnikov
Reliability of Contacts for Press-Pack High-Power Devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:9-11, pp:1676-1681 [Journal] - J. Vobecký, D. Kolesnikov
The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Journal, 2006, v:37, n:3, pp:236-242 [Journal] - P. Hazdra, J. Vobecký, H. Dorschner, K. Brand
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. [Citation Graph (0, 0)][DBLP]
Microelectronics Journal, 2004, v:35, n:3, pp:249-257 [Journal]
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