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Publications of Author

1. G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo
   Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:12, pp:1842-1854 [Journal]
   
2. G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo
   Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:5-6, pp:841-844 [Journal]
   
3. V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent
   A thorough investigation of MOSFETs NBTI degradation. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:1, pp:83-98 [Journal]
   
4. A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent
   Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2005, v:45, n:9-11, pp:1370-1375 [Journal]
   
5. V. Huard, M. Denais, C. R. Parthasarathy
   NBTI degradation: From physical mechanisms to modelling. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2006, v:46, n:1, pp:1-23 [Journal]
   
6. C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix
   Designing in reliability in advanced CMOS technologies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2006, v:46, n:9-11, pp:1464-1471 [Journal]
   
7. C. R. Parthasarathy, A. Bravaix, C. Guérin, M. Denais, V. Huard
   Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. [Citation Graph (0, 0)][DBLP]
   PATMOS, 2007, pp:191-200 [Conf]