Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric. [Citation Graph (0, 0)][DBLP] Microelectronics Reliability, 2005, v:45, n:5-6, pp:961-964 [Journal]