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Publications of Author

1. M. Badila, Ph. Godignon, J. Millán, S. Berberich, G. Brezeanu
   The electron irradiation effects on silicon gate dioxide used for power MOS devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2001, v:41, n:7, pp:1015-1018 [Journal]
   
2. J. Roig, D. Flores, M. Vellvehí, J. Rebollo, J. Millán
   Reduction of self-heating effect on SOIM devices. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2002, v:42, n:1, pp:61-66 [Journal]
   
3. X. Perpiñà, J. F. Serviere, J. Saiz, D. Barlini, Michel Mermet-Guyennet, J. Millán
   Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. [Citation Graph (0, 0)][DBLP]
   Microelectronics Reliability, 2006, v:46, n:9-11, pp:1834-1839 [Journal]
   
4. J. Roig, D. Flores, S. Hidalgo, J. Rebollo, J. Millán
   Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:3, pp:291-297 [Journal]
   
5. A. Pérez-Tomás, X. Jordà, Ph. Godignon, J. L. Gálvez, M. Vellvehí, J. Millán
   IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:8, pp:659-666 [Journal]
   
6. X. Perpiñà, X. Jordà, N. Mestres, M. Vellvehí, Ph. Godignon, J. Millán
   Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. [Citation Graph (0, 0)][DBLP]
   Microelectronics Journal, 2004, v:35, n:10, pp:841-847 [Journal]