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M. J. S. P. Brasil:
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- Y. Galvão Gobato, M. J. S. P. Brasil, I. Camps, H. B. de Carvalho, L. F. dos Santos, G. E. Marques, M. Henini, L. Eaves, G. Hill
Charge buildup effects in asymmetric p-type resonant tunneling diodes. [Citation Graph (0, 0)][DBLP] Microelectronics Journal, 2005, v:36, n:3-6, pp:356-358 [Journal]
- I. Camps, A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil, G. E. Marques, S. S. Makler
Negative charged excitons in double barrier diodes. [Citation Graph (0, 0)][DBLP] Microelectronics Journal, 2005, v:36, n:11, pp:1038-1040 [Journal]
- A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil
Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structures. [Citation Graph (0, 0)][DBLP] Microelectronics Journal, 2003, v:34, n:5-8, pp:659-661 [Journal]
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