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A. A. Quivy: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]

Publications of Author

  1. S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy
    Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:219-222 [Journal]
  2. A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais
    Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2005, v:36, n:3-6, pp:194-196 [Journal]
  3. F. V. de Sales, Júnio Márcio Rosa Cruz, Sebastião William da Silva, M. A. G. Soler, Paulo César de Morais, M. J. da Silva, A. A. Quivy, J. R. Leite
    Coupled rate equation modeling of self-assembled quantum dot photoluminescence. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:5-8, pp:705-707 [Journal]
  4. S. L. Morelhão, A. A. Quivy, J. Härtwig
    Hybrid and effective satellites for studying superlattices. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:5-8, pp:695-699 [Journal]
  5. M. J. da Silva, S. Martini, T. E. Lamas, A. A. Quivy, E. C. F. da Silva, J. R. Leite
    Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:5-8, pp:631-633 [Journal]
  6. T. E. Lamas, S. Martini, M. J. da Silva, A. A. Quivy, J. R. Leite
    Morphological and optical properties of p-type GaAs(001) layers doped with silicon. [Citation Graph (0, 0)][DBLP]
    Microelectronics Journal, 2003, v:34, n:5-8, pp:701-703 [Journal]

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