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T. Pompl: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- T. Pompl, C. Schlünder, M. Hommel, H. Nielen, J. Schneider
Practical aspects of reliability analysis for IC designs. [Citation Graph (0, 0)][DBLP]
DAC, 2006, pp:193-198 [Conf] - G. Innertsberger, T. Pompl, M. Kerber
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:973-975 [Journal] - T. Pompl, C. Engel, H. Wurzer, M. Kerber
Soft breakdown and hard breakdown in ultra-thin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:4, pp:543-551 [Journal] - T. Pompl, A. Kerber, M. Röhner, M. Kerber
Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:9-11, pp:1603-1607 [Journal]
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