Search the dblp DataBase
G. Pananakakis: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:9-10, pp:1295-1300 [Journal] - R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1027-1030 [Journal] - F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2001, v:41, n:7, pp:1035-1039 [Journal] - F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
Gate oxide Reliability assessment optimization. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1505-1508 [Journal] - F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, T. Skotnicki, G. Pananakakis, G. Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:8, pp:1199-1202 [Journal]
Search in 0.027secs, Finished in 0.028secs
| NOTICE1 |
|---|
| System may not be available sometimes or not working properly, since it is still in development with continuous upgrades |
| NOTICE2 |
|---|
| The rankings that are presented on this page should NOT be considered as formal since the citation info is incomplete in DBLP |
for Data Engineering Laboratory, Department of Informatics, Aristotle University © 2002