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G. Busatto: [Publications] [Author Rank by year] [Co-authors] [Prefers] [Cites] [Cited by]
Publications of Author
- F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy
The Reliability of New Generation Power MOSFETs in Radiation Environment. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1629-1634 [Journal] - G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi
Non-destructive high temperature characterisation of high-voltage IGBTs. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2002, v:42, n:9-11, pp:1635-1640 [Journal] - F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:4, pp:549-555 [Journal] - F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1847-1851 [Journal] - G. Busatto, F. Iannuzzo, F. Velardi, M. Valentino, G. P. Pepe
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2003, v:43, n:9-11, pp:1907-1912 [Journal] - G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2005, v:45, n:9-11, pp:1711-1716 [Journal] - C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo
The high frequency behaviour of high voltage and current IGBT modules. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:9-11, pp:1848-1853 [Journal] - F. Iannuzzo, G. Busatto, C. Abbate
Investigation of MOSFET failure in soft-switching conditions. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:9-11, pp:1790-1794 [Journal] - G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò
Experimental study of power MOSFET's gate damage in radiation environment. [Citation Graph (0, 0)][DBLP]
Microelectronics Reliability, 2006, v:46, n:9-11, pp:1854-1857 [Journal]
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